A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

IEEE Transactions on Nuclear Science

Volumn 27, Issue 6, 1980, Pages 1651-1657

  McLean, F B ^a  

^a US Army Research Development and Engineering Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS; SEMICONDUCTOR DEVICES, MOS - SEMICONDUCTOR INSULATOR BOUNDARIES;

CAPACITORS;

EID: 0019242095     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4331084     Document Type: Article

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