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Volumn 35, Issue 6, 1988, Pages 1492-1496

Total dose radiation hardness of MOS devices in hermetic ceramic packages

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; ELECTRONICS PACKAGING; HYDROGEN--DIFFUSION;

EID: 0024169724     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25486     Document Type: Article
Times cited : (53)

References (14)
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    • Lee, K.H.1
  • 2
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    • The Role of Hydrogen in Radiation-induced induced Defect Formation in Polysilicon Gate MOS Devices
    • J.R. Schwank, et al., “The Role of Hydrogen in Radiation-induced induced Defect Formation in Polysilicon Gate MOS Devices,” IEEE Trans. Nucl. Sci., NS34, No6, p1152 (1987).
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  • 3
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    • Attaining Low Moisture Levels in Hermetic Packages
    • M. White, et al., “Attaining Low Moisture Levels in Hermetic Packages,” Proc. Intl. Rel. Phys. Symp., (1982).
    • (1982) Proc. Intl. Rel. Phys. Symp.
    • White, M.1
  • 4
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    • Correlating the Radiation Response of MOS Capacitors and Transistors
    • P. Winokur, et al., “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci., NS31, No6, p1435 (1984).
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    • Winokur, P.1
  • 5
    • 0007240288 scopus 로고
    • Growth and Annealing of Trapped Holes and Interface States Using Time Dependent Biases
    • R.K. Freitag, et al.,“Growth and Annealing of Trapped Holes and Interface States Using Time Dependent Biases,” IEEE Trans. Nucl. Sci., NS34, No6, p1172 (1987).
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    • Freitag, R.K.1
  • 6
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    • Interface Trap Generation in Silicon Dioxide when Electrons are Captured by Trapped Holes
    • S.K. Lai, “Interface Trap Generation in Silicon Dioxide when Electrons are Captured by Trapped Holes,” J. Appl. Phys., 54, pp 2540 (1983).
    • (1983) J. Appl. Phys. , vol.54 , pp. 2540
    • Lai, S.K.1
  • 7
    • 0021601862 scopus 로고
    • Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures
    • V. Zekeriya and T.P. Ma, “Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures,” IEEE Trans. Nucl. Sci., NS31, No6, p1261 (1984).
    • (1984) IEEE Trans. Nucl. Sci. , vol.NS31 , Issue.6 , pp. 1261
    • Zekeriya, V.1    Ma, T.P.2
  • 8
    • 31744437748 scopus 로고
    • Correlation Between Mechanical Stress and Hydrogen-related Effects on Radiation induced Damage in MOS Structures
    • K. Kasama, et al., “Correlation Between Mechanical Stress and Hydrogen-related Effects on Radiation induced Damage in MOS Structures,” IEEE Trans. Nucl. Sci., NS34, No6, p1202 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS34 , Issue.6 , pp. 1202
    • Kasama, K.1
  • 9
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    • Characterization of Annealing of Co(60) Gamma-ray Damage at the Si/SiO2 Interface
    • A.G. Sabnis, “Characterization of Annealing of Co(60) Gamma-ray Damage at the Si/SiO2 Interface,” IEEE Trans. Nucl. Sci., NS30, No6, p4094 (1983).
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    • Sabnis, A.G.1
  • 10
    • 0021587257 scopus 로고
    • Physical Mechanisms Contributing to Device Rebound
    • J.R. Schwank, et al., “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci., NS31, No6, p1434 (1984).
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    • Schwank, J.R.1
  • 11
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    • Radiation-induced Defects in SiO2 as Determined with XPS
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  • 12
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    • The Nature of the Deep Hole Trap in MOS Oxides
    • H.S. Witham and P.M. Lenehan, “The Nature of the Deep Hole Trap in MOS Oxides,” IEEE Trans. on Nucl. Sci., NS34, No6, p1147 (1987).
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    • Witham, H.S.1    Lenehan, P.M.2
  • 13
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  • 14
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    • D.L. Griscom, “Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-on-Si Structures,” J. Appl. Phys., 58, p2524 (1985).
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    • Griscom, D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.