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Volumn 52, Issue 2, 1981, Pages 879-884

Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RESONANCE;

SEMICONDUCTING SILICON;

EID: 0019529879 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.328771 Document Type: Article

Times cited : (513)

References (13)

1
- 84926535550
- 1977, (Electrochemical Soc. Princeton, N. J.), edited by H. R. Huff, and E. Sirtl
- (1977) Semiconductor Silicon , pp. 276
- Deal, B.E.¹

4
- 6044256723
- In the present paper, recommended new symbols for oxide charges will be used: [formula omitted] interface trap density, units [formula omitted] (formerly [formula omitted] [formula omitted] [formula omitted] interface state density, surface state density, fast state density); [formula omitted] number of fixed oxide charges per units [formula omitted] (formerly [formula omitted] [formula omitted] et al.).
- (1980) J. Electrochem. Soc , vol.127 , pp. 979
- Deal, B.E.¹

5
- 0008217910
- (1966) J. Appl. Phys , vol.37 , pp. 1879
- Chung, M.F.¹ Haneman, D.²

7
- 84951065562
- Doctoral dissertation, University of Amsterdam, (unpublished).
- (1978)
- Sieverts, E.G.¹

8
- 0018107283
- (Pergamon, New York), edited by S. T. Pantelides
- (1978) The Physics of [formula omitted] and its Interfaces , pp. 232
- Griscom, D.L.¹

10
- 84934591069
- (1979) J. Electrochem. Soc , vol.126 , pp. 1574
- Razouk, R.R.¹ Deal, B.E.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.