Vacuum ultraviolet radiation effects in sio2

IEEE Transactions on Nuclear Science

Volumn 18, Issue 6, 1971, Pages 99-105

  Derbenwick, G F ^a   Powell, R J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84944983000     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1971.4326419     Document Type: Article

References (19)

1. Zaininger, K.H. and Holmes-Siedle, A.G. “A Survey of Radiation Effects in Metal-Insulator-Semiconductor Devices” RCA Rev., vol. 28, pp. 208–240, 1967.
2. Snow, E. H, Grove, A.S., and Fitzgerald, D.J. “Effects of Ionizing Radiation on Oxidized Silicon Surfaces and Planar Devices” Proc. IEEE, vol. 55, pp. 1168–1185, July 1967.
3. Mitchell, J.P. “Radiation-Induced Space-Charge Buildup in MOS Structures” IEEE Trans. Electron Devices, vol. ED-14, pp. 764–774, November 1967.
4. Zaininger, K.H. “Electron Bombardment of MOS Capacitors” Appl. Phys. Lett., vol. 8, pp. 140–142, March 15, 1966.
5. Lattice relaxation effects associated with the electron-hole pair excitation may occur, however.
6. Powell, R.J. “Photoinjection into SiO 2 : Use of Optical Interference to Determine Electron and Hole Contributions” J. Appl. Phys., vol. 40, pp. 5093–5101, December 1969.
7. Powell, R.J. “Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents” J. Appl. Phys., vol. 41, pp. 2424–2432., May 1970.
8. Courtesy of N.V. Smith.
9. Philipp, H.R., Sol. St. Comm. 4, 73, 1966.
10. Differential capacitance vs. voltage curves.
11. This corresponds to 2.4x10 8 rads at 10.2 eV. However, since the amount of positive charging varies directly with the number of electron-hole pairs created, the photon dose is much more meaningful than rads as a measure of incident radiation.
12. The accumulation of a large positive space charge can result in sufficient field at the Si-SiO 2 interface to produce significant electron tunneling from the Si into the SiO 2. This is one mechanism limiting space charge accumulation at large doses and it is believed to be responsible for at least part of some small relaxation effects observed following cessation of irradiation.
13. Derbenwick, G.F. and Powell., R.J., to be published.
14. Oren, R. and Ghandi, S.K. “ultraviolet-Enhanced Oxidation of Silicon” J. Appl. Phys., vol. 42, pp. 752–756, February 1971.
15. Powell, R.J. “The Use of Photoinjection to Determine Oxide Charge Distributions and Interface Properties in MOS structures” IEEE Trans. Nuclear Science, vol. NS-17, p. 41, December 1970.
16. Berglund, C.N. and Powell, R.J. “Photoinjection into SiO 2 : Electron Scattering in the Image Force Potential Well'” J. Appl. Phys., vol. 42, pp. 573–579, February 1971.
17. O’Keeffe, T.W. and Haudy, R.N. “Fabrication of Planar Silicon Transistors Without Photoresist” Sol. State Comm., vol. 11, pp. 261–266, 1968.
18. Nicollian, E.H., et al. “Electrochemical Charging of Thermal SiO 2 Films by Inject e d Electron Currents” J. Appl. Phys., to be published, October 1971.
19. It is important to note that no charging of this sample was observed under zero-bias irradiation. Zero bias is defined with a metal electrode shorted to the substrate.