Field- and time-dependent radiation effects at the SiO2/Si interface of hardened MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 24, Issue 6, 1977, Pages 2113-2118

  Winokur, P S ^a   Boesch, H E ^a   McGarrity, J M ^a   McLean, F B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - RADIATION EFFECTS;

MOS CAPACITORS;

CAPACITORS;

EID: 0017741211     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1977.4329176     Document Type: Article

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