-
1
-
-
1842630875
-
-
ASM International, Materials Park, OH
-
Park J Chemical vapor deposition 2001, vol. 2. ASM International, Materials Park, OH.
-
(2001)
Chemical vapor deposition
, vol.2
-
-
Park, J.1
-
2
-
-
0033872696
-
TEM investigation of silicon carbide wafers with reduced micropipe density
-
Saddow SE, Schattner TE, Shamsuzzoha M, Rendakova SV, Dmitriev VA TEM investigation of silicon carbide wafers with reduced micropipe density. J Electron Mater 2000, 29(3):364-367.
-
(2000)
J Electron Mater
, vol.29
, Issue.3
, pp. 364-367
-
-
Saddow, S.E.1
Schattner, T.E.2
Shamsuzzoha, M.3
Rendakova, S.V.4
Dmitriev, V.A.5
-
3
-
-
63849167484
-
SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate
-
La Via F, Izzo G, Mauceri M, Pistone G, Condorelli G, Perdicaro L, et al. SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate. Mater Sci Forum 2009, 600-603:123-126.
-
(2009)
Mater Sci Forum
, vol.600-603
, pp. 123-126
-
-
La Via, F.1
Izzo, G.2
Mauceri, M.3
Pistone, G.4
Condorelli, G.5
Perdicaro, L.6
-
4
-
-
0031698054
-
The material quality of CVD-grown SiC using different carbon precursors
-
Hallin C, Ivanov LG, Egilsson T, Henry A, Kordina O, Janzen E The material quality of CVD-grown SiC using different carbon precursors. J Cryst Growth 1998, 183:163-174.
-
(1998)
J Cryst Growth
, vol.183
, pp. 163-174
-
-
Hallin, C.1
Ivanov, L.G.2
Egilsson, T.3
Henry, A.4
Kordina, O.5
Janzen, E.6
-
5
-
-
0001364471
-
SiC formation by reaction of Si(001) with acetylene: electronic structure and growth mode
-
Dufour G, Rochet F, Stedile FC, Poncey Ch, De Crescenzi M, Gunnella R, et al. SiC formation by reaction of Si(001) with acetylene: electronic structure and growth mode. Phys Rev B 1997, 56(7):4266-4282.
-
(1997)
Phys Rev B
, vol.56
, Issue.7
, pp. 4266-4282
-
-
Dufour, G.1
Rochet, F.2
Stedile, F.C.3
Poncey, C.4
De Crescenzi, M.5
Gunnella, R.6
-
6
-
-
0033098324
-
Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilane
-
Madapura S, Steckl AJ, Lobodab M Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilane. J Electrochem Soc 1999, 146(3):1197-1202.
-
(1999)
J Electrochem Soc
, vol.146
, Issue.3
, pp. 1197-1202
-
-
Madapura, S.1
Steckl, A.J.2
Lobodab, M.3
-
7
-
-
27744465954
-
-
Artech House, Inc., Norwood, MA, p. 18
-
Saddow SE, Agarwal A Advances in Silicon Carbide Processing and Applications 2004, Artech House, Inc., Norwood, MA, p. 18.
-
(2004)
Advances in Silicon Carbide Processing and Applications
-
-
Saddow, S.E.1
Agarwal, A.2
-
8
-
-
28144443999
-
High growth rates (>30μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor
-
Myers RL, Shishkin Y, Kordina O, Saddow SE High growth rates (>30μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor. J Cryst Growth 2005, 285(4):483-486.
-
(2005)
J Cryst Growth
, vol.285
, Issue.4
, pp. 483-486
-
-
Myers, R.L.1
Shishkin, Y.2
Kordina, O.3
Saddow, S.E.4
-
9
-
-
34247218027
-
High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor
-
Masahara K, Takahashi T, Kushibe M, Ohno T, Nishio J, Kojima K, et al. High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor. Mater Sci Forum 2002, 389-393:179.
-
(2002)
Mater Sci Forum
, vol.389-393
, pp. 179
-
-
Masahara, K.1
Takahashi, T.2
Kushibe, M.3
Ohno, T.4
Nishio, J.5
Kojima, K.6
-
10
-
-
0242581491
-
Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD
-
Fujihira K, Kimoto T, Matsunami H Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD. Mater Sci Forum 2003, 433-436:161.
-
(2003)
Mater Sci Forum
, vol.433-436
, pp. 161
-
-
Fujihira, K.1
Kimoto, T.2
Matsunami, H.3
-
11
-
-
12944286624
-
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
-
Ellison A, Zhang J, Magnusson W, Henry A, Wahab Q, Bergman JP, et al. Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments. Mater Sci Forum 2000, 338-342:131.
-
(2000)
Mater Sci Forum
, vol.338-342
, pp. 131
-
-
Ellison, A.1
Zhang, J.2
Magnusson, W.3
Henry, A.4
Wahab, Q.5
Bergman, J.P.6
-
12
-
-
0031536335
-
Growth of SiC by "hot-wall" CVD and HTCVD
-
Kordina O, Hallin C, Henry A, Bergman JP, Ivanov I, Ellison A, et al. Growth of SiC by "hot-wall" CVD and HTCVD. Phys Stat Sol (b) 1997, 202:321.
-
(1997)
Phys Stat Sol (b)
, vol.202
, pp. 321
-
-
Kordina, O.1
Hallin, C.2
Henry, A.3
Bergman, J.P.4
Ivanov, I.5
Ellison, A.6
-
13
-
-
57749185026
-
4H-SiC epitaxial layer growth by trichlorosilane (TCS)
-
La Via F, Izzo G, Mauceri M, Pistone G, Condorelli G, Perdicaro L, et al. 4H-SiC epitaxial layer growth by trichlorosilane (TCS). J Crystal Growth 2008, 311:107.
-
(2008)
J Crystal Growth
, vol.311
, pp. 107
-
-
La Via, F.1
Izzo, G.2
Mauceri, M.3
Pistone, G.4
Condorelli, G.5
Perdicaro, L.6
-
14
-
-
84882847178
-
-
Food and Drug Administration (FDA) (2005, 07/08/2009). Rithron-XR Coronary Stent System-P030037
-
Food and Drug Administration (FDA) (2005, 07/08/2009). Rithron-XR Coronary Stent System-P030037, 2011. p. 1.
-
(2011)
, pp. 1
-
-
-
15
-
-
70349201093
-
Silicon carbide as a material for biomedical microsystems
-
MEMS/MOEMS'09
-
Zorman CA. Silicon carbide as a material for biomedical microsystems, in: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS'09, 2009. p. 1-7.
-
(2009)
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2009.
, pp. 1-7
-
-
Zorman, C.A.1
-
17
-
-
0002856733
-
PECVD silicon carbide as a chemically resistant material for micromachined transducers
-
Flannery AF, Mourlas NJ, Storment CW, Tsai S, Tan SH, Heck J, et al. PECVD silicon carbide as a chemically resistant material for micromachined transducers. Sens Actuators A Phys 1998, 70:48-55.
-
(1998)
Sens Actuators A Phys
, vol.70
, pp. 48-55
-
-
Flannery, A.F.1
Mourlas, N.J.2
Storment, C.W.3
Tsai, S.4
Tan, S.H.5
Heck, J.6
-
18
-
-
0028413211
-
SiC films prepared by pulsed excimer laser deposition
-
Zehnder T, Blatter A, Bächli A SiC films prepared by pulsed excimer laser deposition. Thin Solid Films 1994, 241:138-141.
-
(1994)
Thin Solid Films
, vol.241
, pp. 138-141
-
-
Zehnder, T.1
Blatter, A.2
Bächli, A.3
-
19
-
-
38149121497
-
PECVD amorphous silicon carbide membranes for cell culturing
-
Iliescu C, Chen B, Poenar DP, Lee YY PECVD amorphous silicon carbide membranes for cell culturing. Sens Actuators B Chem 2008, 129:404-411.
-
(2008)
Sens Actuators B Chem
, vol.129
, pp. 404-411
-
-
Iliescu, C.1
Chen, B.2
Poenar, D.P.3
Lee, Y.Y.4
-
20
-
-
0346124147
-
Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating
-
Cogan SF, Edell DJ, Guzelian AA, Ping Liu Y, Edell R Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating. J Biomed Mater Res Part A 2003, 67A:856-867.
-
(2003)
J Biomed Mater Res Part A
, vol.67 A
, pp. 856-867
-
-
Cogan, S.F.1
Edell, D.J.2
Guzelian, A.A.3
Ping Liu, Y.4
Edell, R.5
-
21
-
-
1242310293
-
Use of deposition pressure to control residual stress in polycrystalline SiC films
-
Fu X, Jezeski R, Zorman CA, Mehregany M Use of deposition pressure to control residual stress in polycrystalline SiC films. Appl Phys Lett 2004, 84:341-343.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 341-343
-
-
Fu, X.1
Jezeski, R.2
Zorman, C.A.3
Mehregany, M.4
-
22
-
-
44149123605
-
Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition
-
Iliescu C, Chen B, Wei J, Pang AJ Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition. Thin Solid Films 2008, 516(16):5189-5193.
-
(2008)
Thin Solid Films
, vol.516
, Issue.16
, pp. 5189-5193
-
-
Iliescu, C.1
Chen, B.2
Wei, J.3
Pang, A.J.4
-
23
-
-
0028413211
-
SiC films prepared by pulsed excimer laser deposition.
-
Papers presented at the European Materials Research Society 1993 Spring Conference, Symposium C: Ion beam, plasma, laser and thermally-stimulated deposition processes, Strasbourg, France, May 4-7, 1993, 1 April 1994, p. 138-141. ISSN 0040-6090, Doi: 10.1016/0040-6090(94)90414-6.
-
Zehnder T, Blatter A, Bachli A. SiC films prepared by pulsed excimer laser deposition. Thin Solid Films 241; (1-2). Papers presented at the European Materials Research Society 1993 Spring Conference, Symposium C: Ion beam, plasma, laser and thermally-stimulated deposition processes, Strasbourg, France, May 4-7, 1993, 1 April 1994, p. 138-141. ISSN 0040-6090, Doi: 10.1016/0040-6090(94)90414-6.
-
Thin Solid Films
, vol.241
, Issue.1-2
-
-
Zehnder, T.1
Blatter, A.2
Bachli, A.3
-
25
-
-
0029949429
-
Coating of cardiovascular stents with a semiconductor to improve their hemocompatibility
-
01/01
-
Bolz A, Amon M, Ozbek C, Heublein B, Schaldach M Coating of cardiovascular stents with a semiconductor to improve their hemocompatibility. Tex Heart Inst J 1996, 23:162-166. 01/01.
-
(1996)
Tex Heart Inst J
, vol.23
, pp. 162-166
-
-
Bolz, A.1
Amon, M.2
Ozbek, C.3
Heublein, B.4
Schaldach, M.5
-
27
-
-
0037502881
-
Tenax versus Nir Stent Study. Comparison of a silicon carbide-coated stent versus a noncoated stent in human beings: the Tenax versus Nir Stent Study's long-term outcome
-
04/01
-
Unverdorben M, Sippel B, Degenhardt R, Sattler K, Fries R, Abt B, et al. Tenax versus Nir Stent Study. Comparison of a silicon carbide-coated stent versus a noncoated stent in human beings: the Tenax versus Nir Stent Study's long-term outcome. Am Heart J 2003, 145:e17. 04/01.
-
(2003)
Am Heart J
, vol.145
-
-
Unverdorben, M.1
Sippel, B.2
Degenhardt, R.3
Sattler, K.4
Fries, R.5
Abt, B.6
-
28
-
-
0001914698
-
Coating of vascular stents with antithrombogenic amorphous silicon carbide
-
Harder C, Rzany A, Schaldach M Coating of vascular stents with antithrombogenic amorphous silicon carbide. Prog Biomed Res 1999, 4:71-77.
-
(1999)
Prog Biomed Res
, vol.4
, pp. 71-77
-
-
Harder, C.1
Rzany, A.2
Schaldach, M.3
-
29
-
-
0003531591
-
-
McGraw-Hill, Inc.;, New York/St. Louis/San Francisco/Toronto/London/Syndey
-
Hirth JP, Lothe J Theory of dislocations 1968, McGraw-Hill, Inc.;, New York/St. Louis/San Francisco/Toronto/London/Syndey.
-
(1968)
Theory of dislocations
-
-
Hirth, J.P.1
Lothe, J.2
-
30
-
-
0033677268
-
Structure evolution during processing of polycrystalline films
-
Thompson CV Structure evolution during processing of polycrystalline films. Annu. Rev. Mater. Sci. 2000, 30:159-190.
-
(2000)
Annu. Rev. Mater. Sci.
, vol.30
, pp. 159-190
-
-
Thompson, C.V.1
-
32
-
-
84879689645
-
Materials for microelectromechanical systems
-
Taylor & Francis Group, Boca Raton, FL, M. Gad-el-Hak (Ed.)
-
Beheim GM, Evans LJ Materials for microelectromechanical systems. MEMS: design and fabrication 2006, 8.5-8.7. Taylor & Francis Group, Boca Raton, FL. 2nd ed. M. Gad-el-Hak (Ed.).
-
(2006)
MEMS: design and fabrication
-
-
Beheim, G.M.1
Evans, L.J.2
-
34
-
-
0032001410
-
Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon
-
Zorman CA, Roy S, Wu CH, Fleishman AJ, Mehregany M Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon. J Mater Res 1998, 13:406-412.
-
(1998)
J Mater Res
, vol.13
, pp. 406-412
-
-
Zorman, C.A.1
Roy, S.2
Wu, C.H.3
Fleishman, A.J.4
Mehregany, M.5
-
35
-
-
9944259696
-
Growth and physical properties of LPCVD polycrystalline films
-
Harbeke G, Krausbauer L, Steigmeier E, Windmer A, Kappert H, Neugebauer G Growth and physical properties of LPCVD polycrystalline films. J Electrochem Soc 1984, 131:675-682.
-
(1984)
J Electrochem Soc
, vol.131
, pp. 675-682
-
-
Harbeke, G.1
Krausbauer, L.2
Steigmeier, E.3
Windmer, A.4
Kappert, H.5
Neugebauer, G.6
-
36
-
-
68549115974
-
Deep reactive ion etching for bulk micromachining of silicon carbide
-
Taylor & Francis Group, Boca Raton, FL, M. Gad-el-Hak (Ed.)
-
Beheim GM, Evans LJ Deep reactive ion etching for bulk micromachining of silicon carbide. MEMS: design and fabrication 2006, 8.5-8.7. Taylor & Francis Group, Boca Raton, FL. 2nd ed. M. Gad-el-Hak (Ed.).
-
(2006)
MEMS: design and fabrication
-
-
Beheim, G.M.1
Evans, L.J.2
-
37
-
-
17044443409
-
Preliminary investigation of 3C-SiC on silicon for biomedical applications
-
Carter G, Casady J, Okhuysen M, Scofield JD, Saddow SE Preliminary investigation of 3C-SiC on silicon for biomedical applications. Mater Sci Forum 2000, 338-342:1149-1152.
-
(2000)
Mater Sci Forum
, vol.338-342
, pp. 1149-1152
-
-
Carter, G.1
Casady, J.2
Okhuysen, M.3
Scofield, J.D.4
Saddow, S.E.5
-
38
-
-
0037817771
-
Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS.
-
Kyoto, Japan
-
Federico S, Hibert C, Fritschi R, Fluckiger Ph, Renaud Ph, Ionescu AM. Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS. in: Proceedings of 16th annual IEEE international micro electro mechanical systems conference, MEMS 2003, Kyoto, Japan, 2003, p. 570-3.
-
(2003)
Proceedings of 16th annual IEEE international micro electro mechanical systems conference, MEMS 2003
, pp. 570-3
-
-
Federico, S.1
Hibert, C.2
Fritschi, R.3
Fluckiger, P.4
Renaud, P.5
Ionescu, A.M.6
-
39
-
-
68549104186
-
Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications
-
Frewin CL, Locke C, Wang J, Spagnol P, Saddow SE Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications. J Cryst Growth 2009, (June).
-
(2009)
J Cryst Growth
, Issue.JUNE
-
-
Frewin, C.L.1
Locke, C.2
Wang, J.3
Spagnol, P.4
Saddow, S.E.5
-
40
-
-
0034469351
-
A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process
-
Yang J, Kahn H, He AQ, Phillips SM, Heuer AH A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process. J Microelectromech Syst 2000, 9(4):485-494.
-
(2000)
J Microelectromech Syst
, vol.9
, Issue.4
, pp. 485-494
-
-
Yang, J.1
Kahn, H.2
He, A.Q.3
Phillips, S.M.4
Heuer, A.H.5
-
41
-
-
33750378145
-
Development of a high-growth rate 3C-SiC on Si CVD process
-
Reyes M, Shishkin Y, Harvey S, Saddow SE Development of a high-growth rate 3C-SiC on Si CVD process. Mater Res Soc Symp Proc 2006, 911:79-84.
-
(2006)
Mater Res Soc Symp Proc
, vol.911
, pp. 79-84
-
-
Reyes, M.1
Shishkin, Y.2
Harvey, S.3
Saddow, S.E.4
-
42
-
-
34547656905
-
SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor
-
Leone S, Mauceri M, Pistone G, Abbondanza G, Portuese F, Abagnale G, et al. SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor. Mater Sci Forum 2006, 527-529:179-182.
-
(2006)
Mater Sci Forum
, vol.527-529
, pp. 179-182
-
-
Leone, S.1
Mauceri, M.2
Pistone, G.3
Abbondanza, G.4
Portuese, F.5
Abagnale, G.6
-
43
-
-
78349242929
-
Of 3C-SiC epitaxial layers on 6H(0001) SiC
-
Leone S, Beyer F, Henry A, Kordina O, Janzén E, Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC. Phys Status Solidi Rapid Res Lett 2010, 11(4):305-307.
-
(2010)
Phys Status Solidi Rapid Res Lett
, vol.11
, Issue.4
, pp. 305-307
-
-
Leone, S.1
Beyer, F.2
Henry, A.3
Kordina, O.4
Janzén, E.5
Chloride-based, C.V.D.6
-
44
-
-
0003477452
-
Handbook of chemical vapor deposition: principles
-
Noyes Publications, Norwich, p. 33
-
Pierson HO Handbook of chemical vapor deposition: principles. technology and applications 1999, Noyes Publications, Norwich, p. 33. 2nd ed.
-
(1999)
technology and applications
-
-
Pierson, H.O.1
-
45
-
-
0036499704
-
Epitaxial growth of SiC in a chimney CVD reactor
-
Ellison A, Zhang J, Henry A, Janzén E Epitaxial growth of SiC in a chimney CVD reactor. J Cryst Growth 2002, 236:225.
-
(2002)
J Cryst Growth
, vol.236
, pp. 225
-
-
Ellison, A.1
Zhang, J.2
Henry, A.3
Janzén, E.4
-
46
-
-
84882827284
-
Silicon carbide for MEMS and NEMS-an overview
-
Zorman CA, Mehregany M Silicon carbide for MEMS and NEMS-an overview. Proc IEEE Sens 1998, 86(8).
-
(1998)
Proc IEEE Sens
, vol.86
, Issue.8
-
-
Zorman, C.A.1
Mehregany, M.2
-
47
-
-
33747502586
-
Production on large-scale single-crystal wafers of cubic SiC for semiconductor devices
-
Nishino S, Powell JA, Will HA Production on large-scale single-crystal wafers of cubic SiC for semiconductor devices. Appl Phys Lett 1983, 42:460.
-
(1983)
Appl Phys Lett
, vol.42
, pp. 460
-
-
Nishino, S.1
Powell, J.A.2
Will, H.A.3
-
48
-
-
38449121141
-
Carbonization study of different silicon orientations
-
Severino A, Bongiorno C, Leone S, Mauceri M, Pistone G, Condorelli G, et al. Carbonization study of different silicon orientations. Mater. Sci. Forum 2007, 556-557:171-174.
-
(2007)
Mater. Sci. Forum
, vol.556-557
, pp. 171-174
-
-
Severino, A.1
Bongiorno, C.2
Leone, S.3
Mauceri, M.4
Pistone, G.5
Condorelli, G.6
-
49
-
-
85120008431
-
-
219th ECS Meeting, volume 35, issue 6, Montreal, QC, Canada, May 1-6, 2011.
-
Severino A, Locke C, Anzalone R, Camarda M, Piluso N, La Magna A, et al. 3C-SiC film growth on Si substrates. in: 219th ECS Meeting, volume 35, issue 6, Montreal, QC, Canada, May 1-6, 2011.
-
3C-SiC film growth on Si substrates.
-
-
Severino, A.1
Locke, C.2
Anzalone, R.3
Camarda, M.4
Piluso, N.5
La Magna, A.6
-
50
-
-
33845652094
-
Straintailoring in 3C-SiC heteroepitaxial layers grown on Si(100). Chem
-
Ferro G, Chassagne T, Leycuras A, Cauwet F, Monteil Y Straintailoring in 3C-SiC heteroepitaxial layers grown on Si(100). Chem. Vapor Deposit 2006, 12:483-488. 10.1002/cvde.200506461.
-
(2006)
Vapor Deposit
, vol.12
, pp. 483-488
-
-
Ferro, G.1
Chassagne, T.2
Leycuras, A.3
Cauwet, F.4
Monteil, Y.5
-
51
-
-
0036531088
-
3C-SiC hetero-epitaxial growth on undulant Si(001) substrates
-
Nagasawa H, Yagi K, Kawahara T 3C-SiC hetero-epitaxial growth on undulant Si(001) substrates. J Cryst Growth 2002, 237-239:124.
-
(2002)
J Cryst Growth
, vol.237-239
, pp. 124
-
-
Nagasawa, H.1
Yagi, K.2
Kawahara, T.3
-
52
-
-
0029633147
-
Growth of 3C-SiC on on-axis (100) Si substrates by chemical vapor deposition
-
Kordina O, Björketun L-O, Henry A, Hallin C, Glass RC, Hultman L, et al. Growth of 3C-SiC on on-axis (100) Si substrates by chemical vapor deposition. J Cryst Growth 1995, 154:303.
-
(1995)
J Cryst Growth
, vol.154
, pp. 303
-
-
Kordina, O.1
Björketun, L.-O.2
Henry, A.3
Hallin, C.4
Glass, R.C.5
Hultman, L.6
-
53
-
-
8744243163
-
Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal hot-walls
-
Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal hot-walls. Mater Sci Forum 2004, 457-460:273.
-
(2004)
Mater Sci Forum
, vol.457-460
, pp. 273
-
-
Chassagne, T.1
Leycuras, A.2
Balloud, C.3
Arcade, P.4
Peyre, H.5
Juillaguet, S.6
-
54
-
-
0031515387
-
3C-SiC single-crystal films grown on 6-inch Si substrates
-
Nagasawa H, Yagi Y 3C-SiC single-crystal films grown on 6-inch Si substrates. Phys Stat Sol 1997, 202:335.
-
(1997)
Phys Stat Sol
, vol.202
, pp. 335
-
-
Nagasawa, H.1
Yagi, Y.2
-
55
-
-
0034148979
-
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene
-
Wang CF, Tsai DS Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene. Mater Chem Phys 2000, 63:196.
-
(2000)
Mater Chem Phys
, vol.63
, pp. 196
-
-
Wang, C.F.1
Tsai, D.S.2
-
56
-
-
33750718012
-
Growth of 3C-SiC on Si molds for MEMS applications
-
Reyes M, Waits M, Harvey S, Shishkin Y, Geil B, Wolan JT, et al. Growth of 3C-SiC on Si molds for MEMS applications. Mater Sci Forum 2006, 527-529:307.
-
(2006)
Mater Sci Forum
, vol.527-529
, pp. 307
-
-
Reyes, M.1
Waits, M.2
Harvey, S.3
Shishkin, Y.4
Geil, B.5
Wolan, J.T.6
-
57
-
-
1842722885
-
Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates
-
Nagasawa H, Kawahara T, Yagi K Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates. Mater Sci Forum 2002, 389-393:319.
-
(2002)
Mater Sci Forum
, vol.389-393
, pp. 319
-
-
Nagasawa, H.1
Kawahara, T.2
Yagi, K.3
-
58
-
-
0008103819
-
Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane
-
Steckl AJ, Devrajan J, Tran C, Stall RA Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane. Appl Phys Lett 1996, 69:3824.
-
(1996)
Appl Phys Lett
, vol.69
, pp. 3824
-
-
Steckl, A.J.1
Devrajan, J.2
Tran, C.3
Stall, R.A.4
-
59
-
-
0037279706
-
Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy
-
Bustarret E, Vobornik D, Roulot A, Chassagne T, Ferro G, Monteil Y, et al. Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy. Phys Stat Sol (a) 2003, 195:18.
-
(2003)
Phys Stat Sol (a)
, vol.195
, pp. 18
-
-
Bustarret, E.1
Vobornik, D.2
Roulot, A.3
Chassagne, T.4
Ferro, G.5
Monteil, Y.6
-
60
-
-
84882927092
-
Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition
-
Nishiguchi T, Mukai Y, Ohshima S, Nishino S Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition. Mater Sci Forum 2004, 285-288:457-460.
-
(2004)
Mater Sci Forum
, vol.285-288
, pp. 457-460
-
-
Nishiguchi, T.1
Mukai, Y.2
Ohshima, S.3
Nishino, S.4
-
61
-
-
2442636543
-
Heteroepitaxial growth of (111) 3C-SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
-
Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Nishino S Heteroepitaxial growth of (111) 3C-SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition. Appl Phys Lett 2004, 84:3082.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 3082
-
-
Nishiguchi, T.1
Nakamura, M.2
Nishio, K.3
Isshiki, T.4
Nishino, S.5
-
62
-
-
68949115257
-
High quality single crystal 3C-SiC(111) films grown on Si(111)
-
Locke C, Anzalone R, Severino A, Bongiorno C, Litrico G, La Via F, et al. High quality single crystal 3C-SiC(111) films grown on Si(111). Mater Sci Forum 2009, 615-617:145.
-
(2009)
Mater Sci Forum
, vol.615-617
, pp. 145
-
-
Locke, C.1
Anzalone, R.2
Severino, A.3
Bongiorno, C.4
Litrico, G.5
La Via, F.6
-
63
-
-
44849137748
-
Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins
-
Anzalone R, Buongiorno C, Severino A, D'Arrigo G, Abbondanza G, Foti G, et al. Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Appl Phys Lett 2008, 92(22).
-
(2008)
Appl Phys Lett
, vol.92
, Issue.22
-
-
Anzalone, R.1
Buongiorno, C.2
Severino, A.3
D'Arrigo, G.4
Abbondanza, G.5
Foti, G.6
-
64
-
-
34547842638
-
Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
-
Coletti C, Frewin CL, Saddow SE, Hetzel M, Virojanadara C, Starke U Surface studies of hydrogen etched 3C-SiC(001) on Si(001). Appl Phys Lett 2007, 91.
-
(2007)
Appl Phys Lett
, vol.91
-
-
Coletti, C.1
Frewin, C.L.2
Saddow, S.E.3
Hetzel, M.4
Virojanadara, C.5
Starke, U.6
-
65
-
-
67849083255
-
A comprehensive study of hydrogen etching on the major SiC polytypes and crystal oientations
-
Frewin CL, Coletti C, Riedl C, Starke U, Saddow SE A comprehensive study of hydrogen etching on the major SiC polytypes and crystal oientations. Mater Sci Forum 2009, 615-617:589-592.
-
(2009)
Mater Sci Forum
, vol.615-617
, pp. 589-592
-
-
Frewin, C.L.1
Coletti, C.2
Riedl, C.3
Starke, U.4
Saddow, S.E.5
-
66
-
-
38449089479
-
Increased growth rates of 3C-SiC on Si(100) substrates via HCl growth additive
-
Reyes M, Shishkin Y, Harvey S, Saddow SE Increased growth rates of 3C-SiC on Si(100) substrates via HCl growth additive. Mater Sci Forum 2007, 556-557:191-194.
-
(2007)
Mater Sci Forum
, vol.556-557
, pp. 191-194
-
-
Reyes, M.1
Shishkin, Y.2
Harvey, S.3
Saddow, S.E.4
-
67
-
-
55249120922
-
Mechanical properties of single and polycrystalline SiC thin films
-
Reddy JD, Volinsky AA, Frewin C, Locke C, Saddow SE Mechanical properties of single and polycrystalline SiC thin films. Mater Res Soc Symp Proc 2008, 1049.
-
(2008)
Mater Res Soc Symp Proc
, vol.1049
-
-
Reddy, J.D.1
Volinsky, A.A.2
Frewin, C.3
Locke, C.4
Saddow, S.E.5
-
68
-
-
78649378208
-
3C-SiC films on Si for MEMS applications: mechanical properties
-
Locke C, Kravchenko G, Waters P, Reddy JD, Du K, Volinsky AA, et al. 3C-SiC films on Si for MEMS applications: mechanical properties. Mater Sci Forum 2009, 615-617:633-636.
-
(2009)
Mater Sci Forum
, vol.615-617
, pp. 633-636
-
-
Locke, C.1
Kravchenko, G.2
Waters, P.3
Reddy, J.D.4
Du, K.5
Volinsky, A.A.6
-
69
-
-
0012423757
-
Antiphase-domain-free growth of cubic SiC on Si (100)
-
Shibahara K, Nishino S, Matsunami H Antiphase-domain-free growth of cubic SiC on Si (100). App Phys Lett 1987, 50:1888.
-
(1987)
App Phys Lett
, vol.50
, pp. 1888
-
-
Shibahara, K.1
Nishino, S.2
Matsunami, H.3
-
70
-
-
0009675317
-
Improved beta-SiC heteroepitaxial films using off-axis Si substrates
-
Powell JA, Matus LG, Kuczmarski M, Chorey C, Cheng T, Pirouz P Improved beta-SiC heteroepitaxial films using off-axis Si substrates. Appl Phys Lett 1987, 51:823.
-
(1987)
Appl Phys Lett
, vol.51
, pp. 823
-
-
Powell, J.A.1
Matus, L.G.2
Kuczmarski, M.3
Chorey, C.4
Cheng, T.5
Pirouz, P.6
-
71
-
-
74049106288
-
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
-
Severino A, Bongiorno C, Piluso N, Italia M, Camarda M, Mauceri M, et al. High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates. Thin Solid Films 2010, 518:S165-S169.
-
(2010)
Thin Solid Films
, vol.518
-
-
Severino, A.1
Bongiorno, C.2
Piluso, N.3
Italia, M.4
Camarda, M.5
Mauceri, M.6
-
72
-
-
0003069736
-
Growth of 3C-SiC on Si molds for MEMS applications
-
Rupp R, Wiedenhofer A, Friedrichs P, Peters D, Schörner R, Stephani D Growth of 3C-SiC on Si molds for MEMS applications. Mater Sci Forum 1998, 264-268:89.
-
(1998)
Mater Sci Forum
, vol.264-268
, pp. 89
-
-
Rupp, R.1
Wiedenhofer, A.2
Friedrichs, P.3
Peters, D.4
Schörner, R.5
Stephani, D.6
-
73
-
-
27744465954
-
-
Artech House, Inc., Norwood, MA, [chapter 1]
-
Saddow SE, Agarwal A Advances in silicon carbide processing and technology applications 2004, Artech House, Inc., Norwood, MA, [chapter 1].
-
(2004)
Advances in silicon carbide processing and technology applications
-
-
Saddow, S.E.1
Agarwal, A.2
-
75
-
-
33747111200
-
Increased growth rate in a SiC CVD reactor using HCl as a growth additive
-
Myers R, Kordina O, Shishkin Y, Rao S, Everly R, Saddow SE Increased growth rate in a SiC CVD reactor using HCl as a growth additive. Mater Sci Forum 2005, 483-485:73.
-
(2005)
Mater Sci Forum
, vol.483-485
, pp. 73
-
-
Myers, R.1
Kordina, O.2
Shishkin, Y.3
Rao, S.4
Everly, R.5
Saddow, S.E.6
-
76
-
-
33845576358
-
Epitaxial layers grown with HCl addition: a comparison with the standard process
-
La Via F, Galvagno G, Firrincieli A, Roccaforte F, Di Franco S, Ruggiero A, et al. Epitaxial layers grown with HCl addition: a comparison with the standard process. Mater Sci Forum 2006, 527-529:163.
-
(2006)
Mater Sci Forum
, vol.527-529
, pp. 163
-
-
La Via, F.1
Galvagno, G.2
Firrincieli, A.3
Roccaforte, F.4
Di Franco, S.5
Ruggiero, A.6
-
77
-
-
33646536098
-
A vapor-liquid-solid mechanism for growing 3C-SiC single-domain layers on 6H-SiC(0001)
-
Soueidan M, Ferro G A vapor-liquid-solid mechanism for growing 3C-SiC single-domain layers on 6H-SiC(0001). Adv Funct Mater 2006, 16:975-979.
-
(2006)
Adv Funct Mater
, vol.16
, pp. 975-979
-
-
Soueidan, M.1
Ferro, G.2
-
78
-
-
36549095708
-
Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon
-
Lin TL, Sadwick L, Wang KL, Kao YC, Hull R, Nieh CW, et al. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon. Appl Phys Lett 1987, 51(11):814.
-
(1987)
Appl Phys Lett
, vol.51
, Issue.11
, pp. 814
-
-
Lin, T.L.1
Sadwick, L.2
Wang, K.L.3
Kao, Y.C.4
Hull, R.5
Nieh, C.W.6
-
79
-
-
0035340886
-
Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy
-
Saravanan S, Hayashi Y, Soga T, Jimbo T, Umeno M, Sato N, et al. Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy. J Appl Phys 2001, 89(9):5215.
-
(2001)
J Appl Phys
, vol.89
, Issue.9
, pp. 5215
-
-
Saravanan, S.1
Hayashi, Y.2
Soga, T.3
Jimbo, T.4
Umeno, M.5
Sato, N.6
-
80
-
-
0034513639
-
Characterization and fabrication of ZnSe epilayer on porous silicon substrate
-
Chang CC, Lee CH Characterization and fabrication of ZnSe epilayer on porous silicon substrate. Thin Solid Films 2000, 379:287.
-
(2000)
Thin Solid Films
, vol.379
, pp. 287
-
-
Chang, C.C.1
Lee, C.H.2
-
81
-
-
0029218920
-
Diamond growth on porous silicon by hot-filament chemical vapor deposition
-
Liu Z, Zong BQ, Lin Z Diamond growth on porous silicon by hot-filament chemical vapor deposition. Thin Solid Films 1995, 254:3.
-
(1995)
Thin Solid Films
, vol.254
, pp. 3
-
-
Liu, Z.1
Zong, B.Q.2
Lin, Z.3
-
82
-
-
0033343629
-
Characterization of single-crystal 3C-SiC on Si epitaxial layers
-
Saddow SE, Okhuysen ME, Mazzola MS, Dudley M, Huang XR, Huang W, et al. Characterization of single-crystal 3C-SiC on Si epitaxial layers. Mater Res Soc Symp Proc 1999, 535:107-112.
-
(1999)
Mater Res Soc Symp Proc
, vol.535
, pp. 107-112
-
-
Saddow, S.E.1
Okhuysen, M.E.2
Mazzola, M.S.3
Dudley, M.4
Huang, X.R.5
Huang, W.6
-
84
-
-
8744267457
-
Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates
-
Myers RL, Saddow SE, Rao S, Hobart KD, Fatemi M, Kub FJ Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates. Mater Sci Forum 2004, 457-460:1511-1514.
-
(2004)
Mater Sci Forum
, vol.457-460
, pp. 1511-1514
-
-
Myers, R.L.1
Saddow, S.E.2
Rao, S.3
Hobart, K.D.4
Fatemi, M.5
Kub, F.J.6
-
85
-
-
0033335673
-
Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-SiC epitaxial films
-
Hobart KD, Kub FJ, Fatemi M, Taylor C, Eshun E, Spencer MG Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-SiC epitaxial films. J Electrochem Soc 1999, 146(10):3833-3836.
-
(1999)
J Electrochem Soc
, vol.146
, Issue.10
, pp. 3833-3836
-
-
Hobart, K.D.1
Kub, F.J.2
Fatemi, M.3
Taylor, C.4
Eshun, E.5
Spencer, M.G.6
-
86
-
-
2442427068
-
Large diameter, low defect silicon carbide boule growth
-
Carter CH, Glass RC, Brady MF, Malta DP, Henshall D, Müller SG, et al. Large diameter, low defect silicon carbide boule growth. Mater Sci Forum 2001, 353-356:3-6.
-
(2001)
Mater Sci Forum
, vol.353-356
, pp. 3-6
-
-
Carter, C.H.1
Glass, R.C.2
Brady, M.F.3
Malta, D.P.4
Henshall, D.5
Müller, S.G.6
-
87
-
-
4244026531
-
Skytt P. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
-
Bergman P, Lendenmann H, Nilsson PÅ, Lindefelt U Skytt P. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes. Mater Sci Forum 2001, 353-356:299-302.
-
(2001)
Mater Sci Forum
, vol.353-356
, pp. 299-302
-
-
Bergman, P.1
Lendenmann, H.2
Nilsson, P.3
Lindefelt, U.4
-
88
-
-
12944331413
-
Lateral epitaxial overgrowth and pendeo epitaxy of 3C-SiC on Si substrates
-
Saddow SE, Carter G, Geil B, Zheleva TS, Melnychuck G, Okhuysen ME, et al. Lateral epitaxial overgrowth and pendeo epitaxy of 3C-SiC on Si substrates. Mater Sci Forum 2000, 338-342:245-248.
-
(2000)
Mater Sci Forum
, vol.338-342
, pp. 245-248
-
-
Saddow, S.E.1
Carter, G.2
Geil, B.3
Zheleva, T.S.4
Melnychuck, G.5
Okhuysen, M.E.6
-
89
-
-
33747122174
-
Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method
-
Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Isshiki T, et al. Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method. Mater Sci Forum 2004, 483-485:177-180.
-
(2004)
Mater Sci Forum
, vol.483-485
, pp. 177-180
-
-
Sugishita, S.1
Shoji, A.2
Mukai, Y.3
Nishiguchi, T.4
Michikami, K.5
Isshiki, T.6
-
90
-
-
12944331413
-
Lateral epitaxial overgrowth of 3C-SiC on silicon substrates
-
Saddow SE, Carter G, Melnychuck G, Okhuysen ME, Mazzola MS, Su H, et al. Lateral epitaxial overgrowth of 3C-SiC on silicon substrates. Mater Sci Forum 2000, 338-342:245-248.
-
(2000)
Mater Sci Forum
, vol.338-342
, pp. 245-248
-
-
Saddow, S.E.1
Carter, G.2
Melnychuck, G.3
Okhuysen, M.E.4
Mazzola, M.S.5
Su, H.6
-
91
-
-
0035852161
-
Growth of SiC epitaxial layers on porous surfaces of varying porosity
-
Saddow SE, Mynbaeva M, Smith MCD, Smirnov AN, Dimitriev V Growth of SiC epitaxial layers on porous surfaces of varying porosity. Appl Surf Sci 2001, 184:72-78.
-
(2001)
Appl Surf Sci
, vol.184
, pp. 72-78
-
-
Saddow, S.E.1
Mynbaeva, M.2
Smith, M.C.D.3
Smirnov, A.N.4
Dimitriev, V.5
-
92
-
-
84890764413
-
Chapter 3
-
Wiley, New York, R.M. Feenstra, C.E.C. Wood (Eds.)
-
Saddow SE, Shishkin Y, Myers-Ward RL Chapter 3. Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications 2008, Wiley, New York. R.M. Feenstra, C.E.C. Wood (Eds.).
-
(2008)
Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications
-
-
Saddow, S.E.1
Shishkin, Y.2
Myers-Ward, R.L.3
-
93
-
-
33846952893
-
Heteroepitaxial growth of 3C-SiC on silicon-porous silicon-silicon (SPS) substrates
-
Severino A, D'Arrigo G, Leone S, Mauceri M, Abbondanza G, Terrasi A, et al. Heteroepitaxial growth of 3C-SiC on silicon-porous silicon-silicon (SPS) substrates. ECS Trans 2006, 3(5):287.
-
(2006)
ECS Trans
, vol.3
, Issue.5
, pp. 287
-
-
Severino, A.1
D'Arrigo, G.2
Leone, S.3
Mauceri, M.4
Abbondanza, G.5
Terrasi, A.6
-
94
-
-
77955442069
-
3C-SiC heteroepitaxial growth on inverted silicon pyramids (ISP)
-
D'Arrigo G, Severino A, Milazzo G, Bongiorno C, Piluso N, Abbondanza G, et al. 3C-SiC heteroepitaxial growth on inverted silicon pyramids (ISP). Mater Sci Forum 2010, 645-648:135-138.
-
(2010)
Mater Sci Forum
, vol.645-648
, pp. 135-138
-
-
D'Arrigo, G.1
Severino, A.2
Milazzo, G.3
Bongiorno, C.4
Piluso, N.5
Abbondanza, G.6
-
95
-
-
0040357280
-
CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure
-
Wischmeyer F, Wondrak W, Leidich D, Niemann E CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure. Mater Sci Eng B 1999, 61-62:563-566.
-
(1999)
Mater Sci Eng B
, vol.61-62
, pp. 563-566
-
-
Wischmeyer, F.1
Wondrak, W.2
Leidich, D.3
Niemann, E.4
-
96
-
-
0034205141
-
Epitaxial growth of 3C-SiC on thin silicon-on-insulator substrate by chemical vapor deposition using alternating gas supply
-
Shimizu T, Ishikawa Y, Shibata N Epitaxial growth of 3C-SiC on thin silicon-on-insulator substrate by chemical vapor deposition using alternating gas supply. Jpn J Appl Phys 2000, 39:L617.
-
(2000)
Jpn J Appl Phys
, vol.39
-
-
Shimizu, T.1
Ishikawa, Y.2
Shibata, N.3
-
97
-
-
0035123408
-
Suppression of Si cavities at the SiC/Si interface during epitaxial growth of 3C-SiC on silicon-on-insulator
-
Möller H, Krötz G, Eickhoff M, Nielsen A, Papaioannou V, Stoemenos J Suppression of Si cavities at the SiC/Si interface during epitaxial growth of 3C-SiC on silicon-on-insulator. J Electr Soc 2001, 148(1):G16-G24.
-
(2001)
J Electr Soc
, vol.148
, Issue.1
-
-
Möller, H.1
Krötz, G.2
Eickhoff, M.3
Nielsen, A.4
Papaioannou, V.5
Stoemenos, J.6
-
98
-
-
0032644601
-
Role of SIMOX defects on the structural properties of β-SiC/SIMOX
-
Ferro G, Planes N, Papaioannou V, Chaussende D, Monteil Y, Stoemenos J, et al. Role of SIMOX defects on the structural properties of β-SiC/SIMOX. Mater Sci Eng B 1999, 61-62:586.
-
(1999)
Mater Sci Eng B
, vol.61-62
, pp. 586
-
-
Ferro, G.1
Planes, N.2
Papaioannou, V.3
Chaussende, D.4
Monteil, Y.5
Stoemenos, J.6
-
99
-
-
0038296756
-
Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure
-
Irokawa Y, Kodama M, Kachi T Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure. J Electr Soc 2001, 148(12):G680.
-
(2001)
J Electr Soc
, vol.148
, Issue.12
-
-
Irokawa, Y.1
Kodama, M.2
Kachi, T.3
-
100
-
-
0032668725
-
Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition
-
Namavar F, Colter PC, Planes N, Fraisse B, Pernot J, Juillaguet S, et al. Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition. Mater Sci Eng B 1999, 61-62:571-575.
-
(1999)
Mater Sci Eng B
, vol.61-62
, pp. 571-575
-
-
Namavar, F.1
Colter, P.C.2
Planes, N.3
Fraisse, B.4
Pernot, J.5
Juillaguet, S.6
-
101
-
-
24144434423
-
-
Abe Y, Komiyama J, Suzuki S, Nakanishi H J Cryst Growth 2005, 283:41.
-
(2005)
J Cryst Growth
, vol.283
, pp. 41
-
-
Abe, Y.1
Komiyama, J.2
Suzuki, S.3
Nakanishi, H.4
-
102
-
-
18844459488
-
-
Springer, Berlin, p. 207, W.J. Choyke, H. Matsunami, G. Pensl (Eds.)
-
Nagasawa H, Yagi K, Kawahara T, Hatta N, Pensl G, Choyke WJ, et al. Silicon carbide, recent major results 2004, Springer, Berlin, p. 207. W.J. Choyke, H. Matsunami, G. Pensl (Eds.).
-
(2004)
Silicon carbide, recent major results
-
-
Nagasawa, H.1
Yagi, K.2
Kawahara, T.3
Hatta, N.4
Pensl, G.5
Choyke, W.J.6
-
103
-
-
33845574603
-
Fabrication and characterization of 3C-SiC-based MOSFETs
-
Schöner A, Krieger M, Pensl G, Abe M, Nagasawa H Fabrication and characterization of 3C-SiC-based MOSFETs. Chem Vap Depos 2006, 12:523-530.
-
(2006)
Chem Vap Depos
, vol.12
, pp. 523-530
-
-
Schöner, A.1
Krieger, M.2
Pensl, G.3
Abe, M.4
Nagasawa, H.5
-
104
-
-
55449110747
-
Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects
-
Nagasawa H, Abe M, Yagi K, Kawahara T, Hatta N Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects. Phys Stat Sol (b) 2008, 245:1272-1280.
-
(2008)
Phys Stat Sol (b)
, vol.245
, pp. 1272-1280
-
-
Nagasawa, H.1
Abe, M.2
Yagi, K.3
Kawahara, T.4
Hatta, N.5
-
105
-
-
12744269967
-
Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates
-
Myers RL, Hobart KD, Twigg M, Rao S, Fatemi M, Kub FJ, et al. Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates. Mater Res Soc Symp Proc 2004, 815:145-148.
-
(2004)
Mater Res Soc Symp Proc
, vol.815
, pp. 145-148
-
-
Myers, R.L.1
Hobart, K.D.2
Twigg, M.3
Rao, S.4
Fatemi, M.5
Kub, F.J.6
-
107
-
-
84882898201
-
-
Food and Drug Administration (FDA) (2005, 07/08/2009). Rithron-XR Coronary Stent System-P030037
-
Food and Drug Administration (FDA) (2005, 07/08/2009). Rithron-XR Coronary Stent System-P030037, 2011. p. 1.
-
(2011)
, pp. 1
-
-
-
108
-
-
70349201093
-
Silicon carbide as a material for biomedical microsystems
-
MEMS/MOEMS'09
-
Zorman CA. Silicon carbide as a material for biomedical microsystems, in: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS'09, 2009. p. 1-7.
-
(2009)
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2009
, pp. 1-7
-
-
Zorman, C.A.1
-
110
-
-
0028413211
-
SiC films prepared by pulsed excimer laser deposition.
-
Papers presented at the European Materials Research Society 1993 Spring Conference, Symposium C: Ion beam, plasma, laser and thermally-stimulated deposition processes, Strasbourg, France, May 4-7, 1993, 1 April 1994, p. 138-141. ISSN 0040-6090, Doi: 10.1016/0040-6090(94)90414-6.
-
Zehnder T, Blatter A, Bachli A. SiC films prepared by pulsed excimer laser deposition. Thin Solid Films 241; (1-2). Papers presented at the European Materials Research Society 1993 Spring Conference, Symposium C: Ion beam, plasma, laser and thermally-stimulated deposition processes, Strasbourg, France, May 4-7, 1993, 1 April 1994, p. 138-141. ISSN 0040-6090, Doi: 10.1016/0040-6090(94)90414-6.
-
Thin Solid Films
, vol.241
, Issue.1-2
-
-
Zehnder, T.1
Blatter, A.2
Bachli, A.3
-
112
-
-
0037817771
-
Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS.
-
Kyoto, Japan
-
Federico S, Hibert C, Fritschi R, Fluckiger Ph, Renaud Ph, Ionescu AM. Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS. in: Proceedings of 16th annual IEEE international micro electro mechanical systems conference, MEMS 2003, Kyoto, Japan, 2003, p. 570-3.
-
(2003)
Proceedings of 16th annual IEEE international micro electro mechanical systems conference, MEMS 2003
, pp. 570-3
-
-
Federico, S.1
Hibert, C.2
Fritschi, R.3
Fluckiger, P.4
Renaud, P.5
Ionescu, A.M.6
-
113
-
-
85120009368
-
-
219th ECS Meeting, volume 35, issue 6, Montreal, QC, Canada, May 1-6, 2011.
-
Severino A, Locke C, Anzalone R, Camarda M, PilusoN, La Magna A, et al. 3C-SiC film growth on Si substrates. in: 219th ECS Meeting, volume 35, issue 6, Montreal, QC, Canada, May 1-6, 2011.
-
3C-SiC film growth on Si substrates
-
-
Severino, A.1
Locke, C.2
Anzalone, R.3
Camarda, M.4
Piluso, N.5
La Magna, A.6
|