Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 177-180

  Sugishita, S ^a   Shoji, A ^a   Mukai, Y ^a   Nishiguchi, T ^a   Michikami, K ^a   Issiki, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

3C SiC; CVD; Epitaxial growth; Hetero epitaxial growth; Lateral epitaxial overgrowth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; GROWTH CONDITION; LATERAL EPITAXIAL OVERGROWTH;

SILICON CARBIDE;

EID: 33747122174     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.177     Document Type: Conference Paper

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