Characterization of single-crystal 3C-SiC epitaxial layers on Si substrates

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 107-112

  Saddow, S E ^a   Okhusyen, M E ^a   Mazzola, M S ^a   Dudley, M ^a   Huang, X R ^a   Huang, W ^a   Su, H ^a   Shamsuzzoha, M ^a   Lo, Y H ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; SINGLE CRYSTALS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY CRYSTALLOGRAPHY;

CARBONIZED SURFACE; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0033343629     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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