Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 299-302

  Bergman, J P ^a   Lendenmann, H ^a   Nilsson, P A ^a   Lindefelt, U ^a   Skytt, P ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; STACKING FAULTS; SYNCHROTRON RADIATION;

PHOTOLUMINESCENCE LIFETIME MAPPING; RECOMBINATION EMISSION INTENSITY; SILICON CARBIDE DIODES; STRUCTURAL DEFECTS; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 4244026531     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.299     Document Type: Article

References (6)

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2. H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.A. Nilsson, J. P. Bergman, and P. Skytt, This conference.
3. K. Rottner et al., Mat. Sci. and Eng. B61-62 (1999), p. 330.
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6. L. Sugiura, Appl. Phys. Lett. 70 (1997), p. 1317.