Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 11, 2010, Pages 305-307

  Leone, Stefano ^a   Beyer, Franziska C ^a   Henry, Anne ^a   Kordina, Olof ^a   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Chemical vapour deposition; Epitaxy; Semiconductors; Silicon carbide

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CVD REACTORS; EPITAXY; HETEROEPITAXIAL GROWTH; HIGH QUALITY; HYDROGEN CHLORIDE; OPERATING PARAMETERS; REDUCED PRESSURE; SEMICONDUCTORS;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; HOT WORKING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78349242929     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004271     Document Type: Letter

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