Growth of 3C-SiC on Si molds for MEMS applications

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 307-310

  Reyes, M ^a   Waits, M ^b   Harvey, S ^a   Shishkin, Y ^a   Geil, B ^b   Wolan, J T ^a   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b ARUSEDD   (United States)

Author keywords

CVD; Hetero epitaxy; Hot wall; MEMS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; GROWTH RATE; MEMS; MOLDS; X RAY DIFFRACTION;

CVD REACTORS; GROWTH PROCESS; SECONDARY ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 33750718012     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.307     Document Type: Conference Paper

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