SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 179-182

  Leone, S ^a   Mauceri, M ^a   Pistone, G ^a   Abbondanza, G ^a   Portuese, F ^a   Abagnale, G ^b   Valente, G L ^c   Crippa, D ^c   Barbera, M ^d   Reitano, R ^d   Foti, G ^d   La Via, F ^e  

^a C o BIC Sicilia Pantano d'Arci   (Italy)

^b STMICROELECTRONICS   (Italy)

^c LPE   (Italy)

^d UNIVERSITY OF CATANIA   (Italy)

^e CNR IMM   (Italy)

Author keywords

High growth rate; Homoepitaxial growth; Trichlorosilane (TCS)

Indexed keywords

CARBON; CHLORINE COMPOUNDS; EPITAXIAL LAYERS; ETHYLENE; GROWTH RATE; SILICON CARBIDE;

HIGH GROWTH RATE; HOMOEPITAXIAL GROWTH; SILICON PRECURSORS; TRICHLOROSILANE (TCS);

EPITAXIAL GROWTH;

EID: 34547656905     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.179     Document Type: Conference Paper

References (3)

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2. R.L. Myers, O. Kordina, S. Rao, R. Everly and S.E. Saddow: Mater. Sci. Forum Vols. 483-485 (2005), p. 73-76
3. A. Veneroni, F. Omarini and M. Masi, private comunication.