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Volumn 237-239, Issue 1-4 II, 2002, Pages 1244-1249
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3C-SiC hetero-epitaxial growth on undulant Si(0 0 1) substrate
a
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Author keywords
A1. Crystal morphology; A1. Growth models; A1. Planar defects; A3. Chemical vapor deposition; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL STRUCTURE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
SUBSTRATES;
HETERO-EPITAXIAL GROWTH;
VAPOR PHASE EPITAXY;
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EID: 0036531088
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02233-3 Document Type: Article |
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Times cited : (142)
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References (10)
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