SiC films prepared by pulsed excimer laser deposition

Thin Solid Films

Volumn 241, Issue 1-2, 1994, Pages 138-141

  Zehnder, T ^a   Blatter, A ^a   Bachli A ^a  

^a UNIVERSITY OF BERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LASER APPLICATIONS; THIN FILMS;

GROWTH TEMPERATURE; LASER ABLATIONS; THIN SOLID FILMS;

SILICON CARBIDE;

EID: 0028413211     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)90414-6     Document Type: Article

References (9)

1. Amorphous and Crystalline Silicon Carbide
2. Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C
3. Characterization of Silicon Carbide thin Films Deposited by Laser Ablation on [001] and [111] Silicon Wafers
4. X-ray mask development based on SiC membrane and W absorber