Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Journal of Crystal Growth

Volumn 311, Issue 17, 2009, Pages 4179-4182

  Frewin, C L ^a   Locke, C ^a   Wang, J ^a   Spagnol, P ^b   Saddow, S E ^a  

^a University of South Florida   (United States)

^b SRI INTERNATIONAL   (United States)

Author keywords

A1. Characterization; A1. X ray diffraction; A3. Chemical vapor deposition processes; B1. Silicon Carbide; B3. MEMS devices

Indexed keywords

A1. CHARACTERIZATION; A1. X-RAY DIFFRACTION; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. SILICON CARBIDE; B3. MEMS DEVICES;

CHEMICAL VAPOR DEPOSITION; DIFFRACTION; MEMS; MICROELECTROMECHANICAL DEVICES; OXIDE FILMS; POLYSILICON; SUBSTRATES; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SILICON CARBIDE;

EID: 68549104186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.037     Document Type: Article

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