Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 571-575

  Namavar, F ^a   Colter, P C ^a   Planes, N ^b   Fraisse, B ^c   Pernot, J ^b   Juillaguet, S ^b   Camassel, J ^b  

^a SPIRE CORPORATION   (United States)

^b CNRS   (France)

^c UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

3C SiC deposition; New compliant substrate; Porous silicon

Indexed keywords

HETEROEPITAXIAL DEPOSITION;

DEPOSITION; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; POROUS SILICON; RAMAN SCATTERING; SILICON CARBIDE; SILICON WAFERS; X RAY CRYSTALLOGRAPHY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032668725     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00476-0     Document Type: Article

References (14)

1. Camassel J. J. Vac. Sci. Technol. B16:1998;3.
2. G. Kroetz, H. Möller, M. Eickhoff, S. Zappe, R. Ziermann, E. Obermeier, J. Stoemenos, Proceedings of the ECSCRM, Sept 2-4, 1998, Montpellier, France, Mat. Sci. Eng. B61-62 (1999) 516-519.
3. Steckl A.J., Devrajan J., Tran C., Stall R.A. J. Electron. Mater. 26:1997;217.
4. G. Ferro, N. Planes, V. Papaioannou, D. Chaussende, Y. Monteil, Y. Stoemenos, J. Camassel, Proceedings of the ECSCRM, Sept 2-4, 1998, Montpellier, France, Mat. Sci. Eng. B61-62 (1999) 586-592.
5. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1993;460.
6. Namavar F., Maruska H.P., Kalkhoran N.M. Appl. Phys. Lett. 60:1992;2514.
7. Heavens O.S. Optical Properties of Thin Solid Films. 1965;Dover, New York.
8. Camassel J., Dezauzier C., Di Cioccio L. et al. Inst. Phys. Conf. Ser. 142:1996;453.
9. Gonzalez R.J., Zallen R., Berger H. Phys. Rev. B55(11):1997;7014.
10. J.M. Bluet, L.A. Falkovsky, N. Planes, J. Camassel, Mater. Sci. Forum 264-268 (1998).
11. Nishino K., Kimoto T., Matsunami H. Jpn J. Appl. Phys. 36:1997;6405.
12. Y. Chen, K. Matsumoto, Y. Nishio, T. Shirafuji, S. Nishino, Paper P2-54, Proceedings of the ECSCRM, Sept 2-4, 1998, Montpellier, France, Mat. Sci. Eng. B61-62 (1999) 579-582.
13. Choyke W.J., Feng Z.C., Powell J.A. J. Appl. Phys. 64(6):1988;3163.
14. Bishop S.G., Freitas J.A. J. Cryst. Growth. 106:1990;38.