4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 107-113

  La Via, F ^a   Izzo, G ^c   Mauceri, M ^b   Pistone, G ^b   Condorelli, G ^b   Perdicaro, L ^b   Abbondanza, G ^b   Calcagno, L ^c   Foti, G ^c   Crippa, D ^d  

^a CNR IMM   (Italy)

^b Epitaxial Technology Center   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d LPE   (Italy)

Author keywords

A1. Defects; A3. Chemical vapour deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECT DENSITY; DIODES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GROWTH (MATERIALS); HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILANES; SILICON CARBIDE; SILICON COMPOUNDS;

A1. DEFECTS; A3. CHEMICAL VAPOUR DEPOSITION PROCESSES; B2. SEMICONDUCTING SILICON COMPOUNDS; BREAK DOWN VOLTAGES; DOPING LEVELS; EPILAYERS GROWN; EPITAXIAL PROCESSES; GOOD YIELDS; HIGH POWERS; LOW COSTS; LOW DOPED REGIONS; OPTICAL-; SCHOTTKY DIODES; SIC EPILAYERS; SILICON PRECURSORS; STRUCTURAL CHARACTERIZATIONS; TRICHLOROSILANE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57749185026     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.041     Document Type: Article

References (25)

1. N. Karoda, K. Shibahara, W.S. Yoo, S. Nishino, H. Mastunami, Extended Abstract, 19th Conference on Solid State Devices and Materials, Tokyo, 1987, p. 227.
2. Ryu S.H., Krishnaswami S., O'Loughlin M., Richmond J., Agarwal A., Palmour J., and Hefner A.R. IEEE Electron Device Lett. 25 8 (2004) 556
3. Zhao J.H., Alexandrov P., Zhang J.H., and Li X.Q. IEEE Electron Device Lett. 25 7 (2004) 474
4. Das M.K., Sumakeris J.J., Hull B.A., Richmond J., Krishnaswami S., and Powell A.R. Mater. Sci. Forum 483 (2005) 965
5. Zhao J.H., Alexandrov P., and Li X. IEEE Electron Device Lett. 24 6 (2003) 402
6. Jacobson H., Bergman J.P., Hallin C., Janze′ n E., Tuomi T., and Lendenmann H. J. Appl. Phys. 95 (2004) 1485
7. Storasta L., Bergman J.P., Hallin C., and Janze′n E. Mater. Sci. Forum 389-393 (2002) 549
8. Tawara T., Tsuchida H., Izumi S., Kamata I., and Izumi K. Mater. Sci. Forum 457-460 (2004) 565
9. Ellison A., Zhang J., Peterson J., Henry A., Wahab Q., Bergman J.P., Makarov Y.N., Vorob'ev A., Vehanen A., and Janzén E. Mater. Sci. Eng. B 61-62 (1999) 113
10. Syväjärvi M., Yakimova R., Glans P.-A., Henry A., MacMillan M.F., Johansson L.I., and Janzén E. J. Crystal Growth 198/199 (1999) 1019
11. Horia T., Danno K., and Kimono T. J. Crystal Growth 306 (2007) 297
12. Crippa D., Valente G.L., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abagnale G., Veneroni A., Omarini F., Zamolo L., Masi M., Roccaforte F., Giannazzo F., Di Franco S., and La Via F. Mat. Sci. Forum 483-485 (2005) 67
13. Lu P., Edgar J.H., Glembocki O.J., Klein P.B., Glaser E.R., Perrin J., and Chaudhuri J. J. Crystal Growth 285 (2005) 506
14. Pedersen H., Leone S., Henry A., Darakchieva V., and Janzén E. Surf. Coat. Technol. 201 (2007) 8931
15. Veneroni A., and Masi M. Chem. Vapour Deposition 12 8-9 (2006) 562
16. Giannazzo F., Musumeci P., Calcagno L., Makhtari A., and Raineri V. Mater. Sci. Semicond. Process 4 (2001) 195
17. Giannazzo F., Calcagno L., Raineri V., Ciampolini L., Ciappa M., and Napolitani E. Appl. Phys. Lett. 79 (2001) 1211
18. Veneroni A., Omarini F., Moscatelli D., Masi M., Leone S., Mauceri M., Pistone G., and Abbondanza G. J. Crystal Growth 275 (2005) e295
19. Valente G., Cavallotti C., Masi M., and Carrà S. J. Crystal Growth 230 (2001) 247
20. Cavalotti C., and Masi M. Silicon Epitaxy, Semiconductors and Semimetals (2001), Academic Press, San Diego (cap. 2, 51)
21. M. Camarda, A. La Magna, P. Fiorenza, G. Izzo, F. La Via, Mat. Sci. Forum 600-603 (2009) 135
22. Zhang J., Storasta L., Bergman J., Son N.T., and Jansen E. J. Appl. Phys. 93 (2003) 4708
23. Danno K., Kimoto T., and Matsunami H. Appl. Phys. Lett. 86 (2005) 122104
24. A. Pimpinelli, I. Villain, Physics of Crystal Growth, Cambridge, 1998.
25. Storasta, Bergman J.P., Janzén E., Henry A., and Lu J. J. Appl. Phys. 96 (2004) 4909