Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2003, Pages 570-573

  Frederico S ^a   Hibert, C ^a   Fritschi, R ^a   Fluckiger Ph ^a   Renaud, Ph ^a   Ionescu, A M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITORS; DRY ETCHING; ELECTRIC INDUCTORS; MICROMACHINING; MOSFET DEVICES; PLASMAS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SURFACES; SWITCHES;

DRY FLUORINE BASED PLASMA CHEMISTRY; HIGH Q SUSPENDED INDUCTORS; RF MEMS SWITCHES; SILICON SACRIFICIAL LAYER DRY ETCHING; SURFACE MICROMACHINING PROCESS; TUNABLE CAPACITORS;

MICROELECTROMECHANICAL DEVICES;

EID: 0037817771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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