Electrical Properties of 3C-SiC Layers Grown on Silicon Substrates with a Novel Stress Relaxation Structure

Journal of the Electrochemical Society

Volumn 148, Issue 12, 2001, Pages

  Irokawa, Yoshihiro ^a   Kodama, Masahito ^a   Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038296756     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1413482     Document Type: Article

References (11)

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