Carbonization study of different silicon orientations

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 171-174

  Severino, A ^a,b   Bongiorno, C ^a   Leone, S ^c   Mauceri, M ^c   Pistone, G ^c   Condorelli, G ^c   Abbondanza, G ^c   Portuese, F ^c   Foti, G ^b   La Via, F ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c C o BIC Sicilia Pantano d'Arci   (Italy)

Author keywords

3C SiC; Carbonization process; LPCVD; TEM analysis

Indexed keywords

CARBONIZATION; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; DEFECTS; LATTICE MISMATCH; SUBSTRATES; THERMAL EXPANSION;

3C-SIC; CARBONIZATION PROCESS; LOW DEFECT DENSITIES; LPCVD; SUBSTRATE ORIENTATION; TEM ANALYSIS; THERMAL EXPANSION COEFFICIENTS; WIDE TEMPERATURE RANGES;

SILICON CARBIDE;

EID: 38449121141     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.171     Document Type: Conference Paper

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