Investigation of 2 inch SIC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 273-276

  Chassagne, T ^a,b   Leycuras, A ^a   Balloud, C ^c   Arcade, P ^c   Peyre, H ^c   Juillaguet, S ^c  

^a CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

3C SiC; Hot Wall Resistive Heating Reactor; LTPL

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAPHITE; MORPHOLOGY; PHOTOLUMINESCENCE; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

3C-SIC; HOT WALL RESISTIVE HEATING REACTOR; LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL); LTPL;

SILICON CARBIDE;

EID: 8744243163     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.273     Document Type: Conference Paper

References (4)

1. A. Leycuras, Mat. Sci. Forum Vol. 338-342 (2000), p. 241
2. A. Leycuras, O. Tottereau, P. Vicente, L. Falkovski, P. Girard, J. Camassel, Mat. Sci. Forum Vol. 389-393(2002), p. 147
3. W.J.Choyke; Z.C. Feng, J.A. Powell, J. Appl. Phys., Vol. 64 (1988), p. 3163
4. G. Ferro, C. Balloud, S. Juillaguet, P. Vicente, J. Camassel, Y. Monteil, Mat. Sci. Forum Vol. 433-436 (2003), p. 115