New technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

Journal of Microelectromechanical Systems

Volumn 9, Issue 4, 2000, Pages 485-494

  Yang, Jie ^{b,c,d,e,f,g,h}   Kahn, Harold ^b   He, An Qiang ^b   Phillips, Stephen M ^a,b   Heuer, Arthur H ^b  

^a IEEE

^b Case Western Reserve University   (United States)

^c TSINGHUA UNIVERSITY   (China)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^e SOUTHERN ILLINOIS UNIVERSITY   (United States)

^f CASE WESTERN RESERVE UNIVERSITY   (United States)

^g CHANGCHUN INSTITUTE OF OPTICS   (China)

^h NanoSciences Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MULTIPOLY PROCESS; POLYSILICON FILMS; STRESS CONTROL;

ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; MICROMACHINING; MULTILAYERS; POLYSILICON; RESIDUAL STRESSES; STRESS CONCENTRATION; TENSILE STRESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

MICROELECTROMECHANICAL DEVICES;

EID: 0034469351     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.896770     Document Type: Article

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