Large diameter, low defect silicon carbide boule growth

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 3-6

  Carter Jr , C H ^a   Glass, R ^a   Brady, M ^a   Malta, D ^a   Henshall, D ^a   Muller S ^a   Tsvetkov, V ^a   Hobgood, D ^a   Powell, A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); SEMICONDUCTING SILICON COMPOUNDS; SUBLIMATION; SUBSTRATES; THERMAL CONDUCTIVITY;

BULK CRYSTAL GROWTH; MICROPIPE DENSITIES; MOISSANITE; PHYSICAL VAPOR TRANSPORT; SILICON CARBIDE BOULE GROWTH;

SILICON CARBIDE;

EID: 2442427068     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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