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Journal of Applied Physics

Volumn 89, Issue 9, 2001, Pages 5215-5218

Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy

(7) Saravanan, S a Hayashi, Y a Soga, T a Jimbo, T a Umeno, M a Sato, N b Yonehara, T b

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b CANON INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035340886 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1362339 Document Type: Article

Times cited : (13)

References (15)

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