SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 486-490

High growth rates (>30 μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor

(4) Myers, R L a Shishkin, Y a Kordina, O b Saddow, S E a

a UNIVERSITY OF SOUTH FLORIDA (United States)

b Caracal Inc (United States)

Author keywords

A1. Crystal morphology; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

A1. CRYSTAL MORPHOLOGY; A3. HOT-WALL EPITAXY;

EPITAXIAL GROWTH;

EID: 28144443999 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.09.037 Document Type: Article

Times cited : (64)

References (11)

1
- 34247218027
- K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida, and K. Arai Mater. Sci. Forum 389-393 2002 179
- (2002) Mater. Sci. Forum , vol.389-393 , pp. 179
- Masahara, K.¹ Takahashi, T.² Kushibe, M.³ Ohno, T.⁴ Nishio, J.⁵ Kojima, K.⁶ Ishida, Y.⁷ Suzuki, T.⁸ Tanaka, T.⁹ Yoshida, S.¹⁰ Arai, K.¹¹

2
- 0242581491
- K. Fujihira, T. Kimoto, and H. Matsunami Mater. Sci. Forum 433-436 2003 161
- (2003) Mater. Sci. Forum , vol.433-436 , pp. 161
- Fujihira, K.¹ Kimoto, T.² Matsunami, H.³

3
- 0002963608
- A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son, and E. Janzén Mater. Sci. Forum 338-342 2000 131
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 131
- Ellison, A.¹ Zhang, J.² Magnusson, W.³ Henry, A.⁴ Wahab, Q.⁵ Bergman, J.P.⁶ Hemmingsson, C.⁷ Son, N.T.⁸ Janzén, E.⁹

4
- 0031536335
- O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, and E. Janzén Phys. Stat. Sol. (B) 202 1997 321
- (1997) Phys. Stat. Sol. (B) , vol.202 , pp. 321
- Kordina, O.¹ Hallin, C.² Henry, A.³ Bergman, J.P.⁴ Ivanov, I.⁵ Ellison, A.⁶ Son, N.T.⁷ Janzén, E.⁸

5
- 28144437684
- J. Zhang, J. Mazzola, C. Hoff, Y. Koshka, and J. Casady Mater. Sci. Forum 483-485 2005 77
- (2005) Mater. Sci. Forum , vol.483-485 , pp. 77
- Zhang, J.¹ Mazzola, J.² Hoff, C.³ Koshka, Y.⁴ Casady, J.⁵

6
- 27744465954
- Artech House, Inc. Norwood
- S.E. Saddow, and A. Agarwal Advances in Silicon Carbide Processing and Applications 2004 Artech House, Inc. Norwood p. 18
- (2004) Advances in Silicon Carbide Processing and Applications
- Saddow, S.E.¹ Agarwal, A.²

7
- 0003477452
- second ed Noyes Publications Norwich
- H.O. Pierson Handbook of Chemical Vapor Deposition: Principles, Technology and Applications second ed 1999 Noyes Publications Norwich p. 33
- (1999) Handbook of Chemical Vapor Deposition: Principles, Technology and Applications
- Pierson, H.O.¹

8
- 28144431911
- www.novasic.com

9
- 0036499704
- A. Ellison, J. Zhang, A. Henry, and E. Janzén J. Crystal Growth 236 2002 225
- (2002) J. Crystal Growth , vol.236 , pp. 225
- Ellison, A.¹ Zhang, J.² Henry, A.³ Janzén, E.⁴

10
- 0031536334
- D.J. Larkin Phys. Stat. Sol. (B) 202 1997 305
- (1997) Phys. Stat. Sol. (B) , vol.202 , pp. 305
- Larkin, D.J.¹

11
- 0036531187
- S. Nakazawa, T. Kimoto, K. Hashimoto, and H. Matsunami J. Crystal Growth 237-239 2002 1213
- (2002) J. Crystal Growth , vol.237-239 , pp. 1213
- Nakazawa, S.¹ Kimoto, T.² Hashimoto, K.³ Matsunami, H.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.