Interracial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 18-25

  Bustarret, E ^a   Vobornik, D ^a   Roulot, A ^a   Chassagne, T ^b   Ferro, G ^b   Monteil, Y ^b   Martinez Guerrero, E ^c   Mariette, H ^c   Daudin, B ^c   Dang, Le Si ^c  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b UNIVERSITÉ LYON 1   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; INTERFACES (MATERIALS); RAMAN SCATTERING; SILICON CARBIDE; STRAIN;

HETERO-EPITAXIAL SYSTEMS;

EPITAXIAL GROWTH;

EID: 0037279706     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306261     Document Type: Conference Paper

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