Increased growth rates of 3C-SiC on Si (100) substrates via HCl growth additive

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 191-194

  Reyes, M ^a   Shishkin, Y ^a   Harvey, S ^a   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

CVD; HCl; Hetero epitaxy; Hot wall

Indexed keywords

ADDITIVES; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

DEPOSITED LAYER; DIFFRACTION PLANES; HOT WALL; LINEAR FUNCTIONS; NOMARSKI OPTICAL MICROSCOPY; SI (001) SUBSTRATE; SI (100) SUBSTRATE; X RAY ROCKING CURVE;

GROWTH RATE;

EID: 38449089479     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.191     Document Type: Conference Paper

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