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Volumn 61-62, Issue , 1999, Pages 586-592
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Role of SIMOX defects on the structural properties of β-SiC/SIMOX
a b c a a c b |
Author keywords
Cavities; Cavity formation; Hetero epitaxy; Silicon overlayer; SIMOX; SiC
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Indexed keywords
SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);
CRYSTAL DEFECTS;
DIFFUSION IN SOLIDS;
EPITAXIAL GROWTH;
FILM GROWTH;
SEMICONDUCTING FILMS;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
SILICON ON INSULATOR TECHNOLOGY;
SILICON WAFERS;
THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0032644601
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00480-2 Document Type: Article |
Times cited : (14)
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References (19)
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