SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate.

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 123-126

  La Via, F ^a   Izzo, G ^a   Mauceri, M ^a   Pistone, G ^a   Condorelli, G ^a   Perdicaro, L ^a   Abbondanza, G ^a   Portuese, F ^a   Galvagno, G ^a   Di Franco, S ^a   Calcagno, L ^b   Foti, G ^a   Valente, G L ^c   Crippa, D ^d  

^a CNR IMM   (Italy)

^b Epitaxial Technology Center   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d LPE   (Italy)

Author keywords

Epitaxial growth; High growth rate; Silicon carbide; Trichlorosilane

Indexed keywords

DEFECT DENSITY; EPITAXIAL GROWTH; GROWTH RATE; SCHOTTKY BARRIER DIODES;

CHARACTERIZATION METHODS; ELECTRICAL CHARACTERIZATION; EPI LAYERS; EPITAXIAL LAYERS GROWTH; HIGH GROWTH-RATE; OPTICAL CHARACTERIZATION; SCHOTTKY DIODES; SILICON PRECURSORS; STRUCTURAL CHARACTERIZATION; TRICHLOROSILANES;

SILICON CARBIDE;

EID: 63849167484     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.123     Document Type: Conference Paper

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