Lateral epitaxial overgrowth and Pendeo epitaxy of 3C-SiC on Si substrates

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Saddow, S E ^a   Carter, G E ^a   Geil, B ^b   Zheleva, T ^b   Melnychuck, G ^a   Okhuysen, M E ^a   Mazzola, M S ^a   Vispute, R D ^c   Derenge, M ^b   Ervin, M ^b   Jones, K A ^b  

^a Dept Electrical and Computer Eng ^*  (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ETCHING; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

LATERAL EPITAXIAL GROWTH (LEO); PENDEO EPITAXY;

SILICON CARBIDE;

EID: 12944331413     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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