Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5189-5193

  Iliescu, Ciprian ^a   Chen, Bangtao ^a   Wei, Jiashen ^a   Pang, Ah Ju ^a  

^a INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

Author keywords

Amorphous silicon carbide; Deposition rate; Dry release; Low stress; PECVD; XeF2

Indexed keywords

AMORPHOUS SILICON; COMPRESSIVE STRESS; DEPOSITION RATES; MEMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TENSILE STRAIN;

AMORPHOUS SILICON CARBIDE; DRY-RELEASE; FREQUENCY MODES;

SILICON CARBIDE;

EID: 44149123605     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.013     Document Type: Article

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