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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 225-238

Epitaxial growth of SiC in a chimney CVD reactor

(4) Ellison, A a,b Zhang, J a Henry, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b Okmetic AB (Sweden)

Author keywords

A1. Growth models; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; ETCHING; GAS DYNAMICS; HYDROGEN; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

CARRIER GASES;

EPITAXIAL GROWTH;

EID: 0036499704 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02129-7 Document Type: Article

Times cited : (46)

References (60)

1
- 0030270183
- (1996) IEEE Trans. Electron Devices , vol.43 , Issue.10 , pp. 1732
- Weitzel, C.E.¹ Palmour, J.W.² Carter Jr., C.H.³ Moore, K.⁴ Nordquist, K.J.⁵ Allen, S.⁶ Thero, C.⁷ Bhatnagar, M.⁸

2
- 0001072754
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1442
- Powell, J.A.¹ Larkin, D.J.² Matus, L.G.L.G.³ Choyke, W.J.⁴ Bradshaw, J.L.⁵ Henderson, L.⁶ Yoganathan, M.⁷ Yang, J.⁸ Pirouz, P.⁹

3
- 0001223239
- (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 201
- Burk Jr., A.A.¹ Rowland, L.B.² Agarwal, A.K.³ Sriram, S.⁴ Brandt, C.D.⁵

4
- 0030107490
- (1996) IEEE Electron Dev. Lett. , vol.17 , pp. 139
- Itoh, A.¹ Kimoto, T.² Matsunami, H.³

5
- 36449003498
- (1994) Appl. Phys. Lett. , vol.64 , Issue.11 , pp. 1386
- Neudeck, P.G.¹ Larkin, D.J.² Powell, J.A.³ Matus, L.G.⁴

6
- 0022026873
- (1985) J. Electrochem. Soc. , vol.132 , pp. 642
- Liaw, P.¹ Davis, R.F.²

7
- 85066583571
- US Patent No. 5011549
- Kong, H.S.¹ Glass, J.T.² Davis, R.F.³

8
- 0008583477
- (1994) Inst. Phys. Conf. Ser. , vol.137 , pp. 41
- Kordina, O.¹ Hallin, C.² Glass, R.C.³ Henry, A.⁴ Janzén, E.⁵

9
- 0342605356
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 97
- Kordina, O.¹ Henry, A.² Janzén, E.³ Carter Jr., C.H.⁴

10
- 0032661933
- (1999) Mater. Sci. Eng. B. , vol.61-62 , pp. 1
- Carter Jr., C.H.¹ Tsvetkov, V.F.² Glass, R.C.³ Henshall, D.⁴ Brady, M.⁵ Müller, St.G.⁶ Kordina, O.⁷ Irvine, K.⁸ Edmond, J.A.⁹ Kong, H.S.¹⁰ Singh, R.¹¹ Allen, S.T.¹² Palmour, J.W.¹³

11
- 0032668730
- (1999) Mater. Sci. Eng. B. , vol.61-62 , pp. 125
- Rupp, R.¹ Wiedenhofer, A.² Stephani, D.³

12
- 0032660207
- (1999) J. Crystal Growth , vol.200 , pp. 458
- Burk Jr., A.A.¹ O'Loughlin, M.J.² Nordby Jr., H.D.³

13
- 14344274203
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 173
- Nordby Jr., H.D.¹ O'Loughlin, M.J.² MacMillan, M.F.³ Burk Jr., A.A.⁴ Oliver Jr., J.D.⁵

14
- 0032288163
- (1998) Solid-State Electron. , vol.42 , Issue.12 , pp. 2119
- Brown, E.R.¹

15
- 85066581436
- (1997) J. Crystal Growth , vol.197 , pp. 147
- Syvärjvi, M.¹ Yakimova, R.² Radamson, H.H.³ Son, N.T.⁴ Wahab, Q.⁵ Ivanov, I.G.⁶ Janzén, E.⁷

16
- 0003343627
- Properties of silicon carbide
- G.L. Harris (Ed.), INSPEC, London
- (1995) EMIS Datareviews Series , vol.13 , pp. 214-227
- Dmietriev, V.A.¹

17
- 3743152808
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 143
- Syväjärvi, M.¹ Yakimova, R.² MacMillan, M.F.³ Tuominen, M.⁴ Kakakanova-Georgieva, A.⁵ Hemmingsson, C.G.⁶ Ivanov, I.G.⁷ Janzén, E.⁸

18
- 0032644609
- (1999) Mater. Sci. Eng. B. , vol.61-62 , pp. 113
- Ellison, A.¹ Zhang, J.² Peterson, J.³ Henry, A.⁴ Wahab, Q.⁵ Bergman, J.P.⁶ Makarov, Y.N.⁷ Vehanen, A.⁸ Janzén, E.⁹

19
- 0035870366
- (2001) Jpn. J. Appl. Phys. , vol.40
- Kimoto, T.¹ Tamura, S.² Chen, Y.³ Fujihira, K.⁴ Matsunami, H.⁵

20
- 0000635629
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 145
- Tsuchida, H.¹ Kamata, I.² Jikimoto, T.³ Izumi, K.⁴

21
- 0000544105
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 141
- Takahashi, K.¹ Uchida, M.² Kitabatake, M.³ Uenoyama, T.⁴

22
- 0000665501
- (1984) J. Crystal Growth , vol.68 , pp. 431
- Leys, M.R.¹ Van Opdorp, C.² Viegers, M.P.A.³ Talen-van der Mheen, H.J.⁴

23
- 85066531073
- (2000) Mater. Sci. Forum , vol.353-356 , pp. 990
- Danielsson, Ö.¹ Forsberg, U.² Henry, A.³ Janzén, E.⁴

24
- 0026116911
- (1991) J. Electrochem. Soc. , vol.138 , Issue.3 , pp. 841
- Allendorf, M.D.¹ Kee, R.J.²

25
- 85066521359
- US patent No. 5792257, 1998

26
- 0031675630
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 645
- MacMillan, M.F.¹ Narfgren, P.O.² Henry, A.³ Janzén, E.⁴

27
- 0035367945
- (2001) J. Crystal Growth , vol.226 , pp. 267
- Zhang, J.¹ Ellison, A.² Henry, A.³ Linnarsson, M.K.⁴ Janzén, E.⁵

28
- 0003605467
- (1971) Philips Res. Rep. , vol.26 , pp. 134
- Eversteijn, F.C.¹

29
- 0031525360
- (1997) Phys. Stat. Sol. (B) , vol.202 , Issue.1 , pp. 281
- Rupp, R.¹ Makarov, Yu.N.² Behner, H.³ Wiedenhofer, A.⁴

30
- 0000530307
- (1986) J. Crystal Growth , vol.77 , pp. 144
- Stock, L.¹ Richter, W.²

31
- 0024304808
- (1989) J. Crystal Growth , vol.94 , pp. 145
- Holstein, W.L.¹ Fitzjohn, J.L.²

32
- 0025401662
- (1990) J. Crystal Growth , vol.100 , pp. 577
- Fotiadis, D.I.¹ Boekholt, M.² Jensen, K.F.³ Richter, W.⁴

33
- 0022711182
- (1986) J. Heat Transfer, Trans. ASME , vol.108 , pp. 299
- Aung, W.¹ Worku, G.²

34
- 0020099234
- (1982) J. Electrochem. Soc. , vol.129 , Issue.3 , pp. 634
- Giling, L.J.¹

35
- 0001508897
- (1959) Phys. Fluids , vol.2 , Issue.3 , pp. 319
- Sparrow, E.M.¹ Eichhorn, R.² Gregg, J.L.³

36
- 0020588837
- (1983) Int. J. Heat Mass Transfer , vol.26 , Issue.1 , pp. 65
- Yao, L.S.¹

37
- 0023451140
- (1987) J. Heat Transfer, Trans. ASME , vol.109 , pp. 947
- Aung, W.¹ Worku, G.²

38
- 0022583275
- (1986) Num. Heat. Transfer , vol.9 , pp. 605
- Habchi, S.¹ Acharya, S.²

39
- 0026156736
- (1991) J. Heat Transfer, Trans. ASME , vol.113 , pp. 507
- Hamadah, T.T.¹ Wirtz, R.A.²

40
- 0024606933
- (1989) J. Heat Transfer , vol.11 , pp. 106
- Morton, B.R.¹ Ingham, D.B.² Keen, D.J.³ Heggs, P.J.⁴

41
- 36449006138
- (1993) J. Appl. Phys. , vol.73 , Issue.2 , pp. 726
- Kimoto, T.¹ Nishino, H.² Yoo, W.S.³ Matsunami, H.⁴

42
- 85066599029
- to be submitted
- (2002) J. Crystal Growth
- Ellison, A.¹ Zhang, J.² Henry, A.³ Bergman, J.P.⁴ Wahab, Q.⁵ Janzén, E.⁶

43
- 4243227351
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 137
- Zhang, J.¹ Ellison, A.² Janzén, E.³

44
- 0025475910
- (1990) J. Crystal Growth , vol.104 , pp. 695
- Ueda, T.¹ Nishino, H.² Matsunami, H.³

45
- 0009314376
- (1988) J. Appl. Phys. , vol.64 , Issue.5 , pp. 2672
- Kong, H.S.¹ Glass, J.T.² Davis, R.F.³

46
- 0000585113
- (1994) J. Appl. Phys. , vol.75 , Issue.2 , pp. 850
- Kimoto, T.¹ Matsunami, H.²

47
- 84918190394
- (1966) J. Electrochem. Soc. , vol.113 , Issue.7 , pp. 728
- Jennings, V.J.¹ Sommer, A.² Chang, H.C.³

48
- 0016332635
- R.C. Marshall, J.W. Faust Jr., C.E. Ryan (Eds.), University of South Carolina Press, Columbia, SC
- (1973) Silicon Carbide , pp. 25
- Wessels, B.¹ Gatos, H.C.² Witt, A.F.³

49
- 84975402284
- (1993) J. Electrochem. Soc. , vol.140 , Issue.3 , pp. 747
- Allendorf, M.D.¹

50
- 0008578516
- (1965) J. Electrochem. Soc. , vol.112 , Issue.1 , pp. 49
- Gulbransen, E.A.¹ Andrew, K.F.² Brassart, F.A.³

51
- 0001600271
- (1965) J. Electrochem. Soc. , vol.112 , Issue.9 , pp. 955
- Chu, T.L.¹ Campbell, R.B.²

52
- 0000566158
- (1969) Jpn. J. Appl. Phys. , vol.8 , Issue.4 , pp. 421
- Kumagawa, M.¹ Kuwabara, H.² Yamada, S.³

53
- 85066517216
- Doctoral Thesis, Diss. No. 599, Linköping University, Sweden
- (1999)
- Ellison, A.¹

54
- 0008905327
- (1976) J. Crystal Growth , vol.33 , pp. 1
- Murthy, T.U.M.S.¹ Miyamoto, N.² Shimbo, M.³ Nishizawa, J.⁴

55
- 0001049712
- (1981) J. Crystal Growth , vol.55 , pp. 145
- Leys, M.R.¹ Veenvliet, H.²

56
- 0001916194
- (1992) Jpn. J. Appl. Phys. , vol.31 , Issue.1 , pp. 1
- Okuyama, K.¹ Huang, D.D.² Seinfeld, J.H.³ Tani, N.⁴ Matsui, I.⁵

57
- 0004319835
- Department of Inorganic Chemistry, Uppsala University, Sweden
- Ekvi System 3.01 from Svensk EnergiData
- Nolang, B.¹

58
- 35848953179
- NSRDS-NBS 37, US Govt. Printing Office, Washington, and supplements
- (1971) JANAF Thermochemical Tables, 2nd Edition
- Stull, D.R.¹

59
- 0023978923
- (1988) J. Crystal Growth , vol.87 , pp. 481
- Stinespring, C.D.¹ Wormhoudt, J.C.²

60
- 0008579249
- (1990) Mater. Res. Symp. Proc. , vol.168 , pp. 31
- Burgess Jr., D.¹ Zachariah, M.R.²

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