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Volumn 433-436, Issue , 2003, Pages 161-164

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

Author keywords

Deep Level Transient Spectroscopy; Fast Epitaxy; Morphology; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; PHOTOLUMINESCENCE;

EID: 0242581491     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.161     Document Type: Conference Paper
Times cited : (10)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.