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Volumn 433-436, Issue , 2003, Pages 161-164
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Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
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Author keywords
Deep Level Transient Spectroscopy; Fast Epitaxy; Morphology; Photoluminescence
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
EPITAXIAL GROWTH;
ETCHING;
MORPHOLOGY;
PHOTOLUMINESCENCE;
HOT-WALL REACTORS;
SILICON CARBIDE;
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EID: 0242581491
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.161 Document Type: Conference Paper |
Times cited : (10)
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References (10)
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