3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP)

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 135-138

  D'Arrigo, G ^a   Severino, A ^a   Milazzo, G ^a   Bongiorno, C ^a   Piluso, N ^a   Abbondanza, G ^b   Mauceri, M ^b   Condorelli, G ^b   La Via, F ^a  

^a CNR   (Italy)

^b Epitaxial Technology Center   (Italy)

Author keywords

3C SiC; High quality growth; Large area substrates; Off axis

Indexed keywords

DEFECTS; SUBSTRATES;

3C-SIC; FILM QUALITY; HETEROEPITAXIAL FILMS; HIGH QUALITY; LARGE-AREA SUBSTRATES; LINEAR DENSITY; OFF-AXIS; SIC DEVICES;

SILICON CARBIDE;

EID: 77955442069     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.135     Document Type: Conference Paper

References (19)

1. J. Yun, T. Takahashi, T. Mitani, Y. Ishida, H. Okumura, J. Cryst. Growth Vol. 291, (2006), p.148 doi:10.1016/j.jcrysgro.2006.03.009. (Pubitemid 44500643)
2. Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida, CVD Mag. Vol. 12, (2006), p.495.
3. E. Polychroniadis, M. Syvajarvi, R.Yakimova, J.Stoemenos, J. Cryst. Growth Vol. 263, (2004), p.68 doi:10.1016/j.jcrysgro.2003.10.092.
4. H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe, Micr. Eng. Vol. 83, (2006), p.185 doi:10.1016/j.mee.2005.10.046. (Pubitemid 43065208)
5. S. Nishino, J. A. Powell, H. A. Hill, Appl. Phys. Lett. Vol. 42 (1983), p.460 doi:10.1063/1.93970.
6. M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow, Spring Mat. Res. Soc. Meeting Proc., Vol. 911, (2006), p.79.
7. T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, and S. Nishino, Appl. Phys. Lett., Vol. 84 (2004), p.3082 doi:10.1063/1.1719270.
8. A. Severino, M. Camarda, G. Condorelli, L.M.S. Perdicaro, R. Anzalone, M. Mauceri, A. La Magna, F. La Via, Appl. Phys. Lett. Vol. 90 (2009), p.101907 doi:10.1063/1.3085769.
9. A. Severino, C. Bongiorno, N. Piluso, M. Italia, M. Camarda, M. Mauceri, G. Condorelli, M. A. Di Stefano, B. Cafra, A. La Magna, F. La Via, Thin Solid Films, in press. Work presented to 6th International Conference on Silicon and Heterostructures (ICSI-6), Los Angeles (USA), May 16-22 2009.
10. M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras, J. Camassel, phys. stat. sol. (a) Vol. 204 (2007), p.981.
11. A. Severino, G. D'Arrigo, C. Bongiorno, S. Scalese, G. Foti, and F. La Via, J. Appl. Phys. Vol. 102 (2007), p.023518 doi:10.1063/1.2756620. (Pubitemid 47191963)
12. M. Portail, M. Zielisnki, T. Chassagne, S. Roy, M. Nemoz, J. Appl. Phys. Vol. 105 (2009), p.083505 doi:10.1063/1.3089215.
13. Ch. Zgheib, L.E. McNeil, P. Kazan, P. Masri, F.M. Morales, O. Ambacher, J. Pezoldt, Appl. Phys. Lett., Vol. 87 (2005), p.041905 doi:10.1063/1.1999858. (Pubitemid 41130166)
14. Y. Abe-, J. Komiyama, S. Suzuki, H. Nakanishi, J. Cryst. Growth Vol. 283 (2005), p.41.
15. H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, V. Papaioannou, J. Stoemenos, J. Electr. Soc. Vol. 148 (2001), p.G16 doi:10.1149/1.1344557. (Pubitemid 32189320)
16. F. Namavar, P.C. Colter, N. Planes, B. Fraisse, J. Pernot, S. Juillaguet, J. Camassel, Mat. Sci. Eng. B Vol. 61-62 (1999), p.571 doi:10.1016/S0921- 5107(98)00476-0.
17. H. Nagasawa, K. Yagi, T. Kawahara, J. Crys. Growth Vol. 237-23, (2002), p.1244.
18. H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W.J. Choyke, T. Yamada, K.M. Itoh, A. Schöner, in: W.J. Choyke, H. Matsunami, G. Pensl (Eds.), Silicon Carbide, Recent Major Results, Springer, Berlin, 2004, p. 207.
19. EU Application No. 08720195.0 - Patent No. 2203 PCT/IT2008000025. "Semiconductor Substrate Suitable for the Realization of Electronic and/or Optoelectronic Devices and Relative Manufacturing Process". Patent Applicant: CNR, Italy.