The material quality of CVD-grown SiC using different carbon precursors

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 163-174

  Hallin, C ^a   Ivanov, I G ^a   Egilsson, T ^a   Henry, A ^a,b   Kordina, O ^a,b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; EXCITONS; HYDROCARBONS; MORPHOLOGY; PHOTOLUMINESCENCE; SURFACE ROUGHNESS;

CARBON PRECURSORS;

SILICON CARBIDE;

EID: 0031698054     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00409-0     Document Type: Article

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