Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 145-148

  Myers, R L ^a   Hobart, K D ^b   Twigg, M ^b   Rao, S ^a   Fatemi, M ^b   Kub, F J ^b   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BONDING; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REDUCTION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HYDROGEN CARRIER GAS; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PROCESS FLOW; WAFER BONDING PROCESS;

SILICON CARBIDE;

EID: 12744269967     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j5.23     Document Type: Conference Paper

References (2)

1. K.D. Hobalt, F.J. Kub, et. al, J. Electrochem. Society, 146 (10) 3833-3836, 1999.
2. R.L. Myers, S.E. Saddow, S. Rao, K.D. Hobart, M. Fatemi, and F.J. Kub, ICSCRM, 2003.