Suppression of Si cavities at the SiC/Si interface during epitaxial growth of 3C-SiC on silicon-on-insulator

Journal of the Electrochemical Society

Volumn 148, Issue 1, 2001, Pages

  Moller H ^a,b   Krotz G ^a   Eickhoff, M ^a   Nielsen, A ^a   Papaioannou, V ^a   Stoemenos, J ^a  

^a DAIMLER AG   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

X RAY ROCKING CURVE (XRC) DIFFRACTION PATTERNS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035123408     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1344557     Document Type: Article

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