Heteroepitaxial growth of (111) 3C-SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3082-3084

  Nishiguchi, Taro ^a   Nakamura, Mitsuhiro ^a   Nishio, Koji ^a   Isshiki, Toshiyuki ^a   Nishino, Shigehiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CARBONIZATION; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); STACKING FAULTS; SUBSTRATES; SURFACE PROPERTIES; THERMAL EFFECTS;

FLOW RATE; GROWTH TEMPERATURE; LATTICE MISMATCH; SUBSTRATE ORIENTATION;

SILICON CARBIDE;

EID: 2442636543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1719270     Document Type: Article

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