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Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins

(7) Anzalone, R a,b Bongiorno, C a Severino, A a,b D'Arrigo, G a Abbondanza, G c Foti, G b La Via, F a

a CNR (Italy)

b UNIVERSITY OF CATANIA (Italy)

c Epitaxial Technology Center (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CUBIC BORON NITRIDE; EPITAXIAL GROWTH; LATTICE MISMATCH; LITHOGRAPHY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METALLIZING; NONMETALS; SILICON; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

(100) SILICON; AMERICAN INSTITUTE OF PHYSICS (AIP); CHEMICAL VAPORS; HETERO EPITAXIAL GROWTH; HETERO-EPITAXY; INITIAL STAGES; LATTICE PARAMETERS; LOW PRESSURE (LP); NUMERICAL SIMULATIONS; POLE FIGURES; SECOND ORDERS; SI (111); SI(2 1 1) SUBSTRATES; SILICON (111) SUBSTRATES; X RAY DIFFRACTION (XRD);

SILICON CARBIDE;

EID: 44849137748 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2920164 Document Type: Article

Times cited : (21)

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