Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1511-1514

  Myers, R L ^a   Saddow, S E ^a   Rao, S ^a   Hobart, K D ^b   Fatemi, M ^b   Kub, F J ^b  

^a University of South Florida   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

3C SIC; CVD; SOI

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

3C-SIC; ANTI-PHASE DOMAIN FORMATION; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON CARBIDE;

EID: 8744267457     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. C.H. Carter et al: Materials Science Forum 353-356 3-6, Trans Tech Pub., Switzerland (2001).
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3. S. E. Saddow, et al: Mat. Res. Soc. Symp. Proc. Vol. 535 (1999), p. 107.
4. K.D. Hobart, F.J. Kub, et al: J. Electrochem Society Vol. 146 (10) (1999), p. 3833.
5. S. E. Saddow, G. Carter, et. Al: Materials Science Forum 338-342 245-248, Trans Tech Pub., Switzerland (2000).