CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 563-566

  Wischmeyer, F ^a   Wondrak, W ^a   Leidich, D ^a   Niemann, E ^a  

^a DAIMLER AG   (Germany)

Author keywords

3C SiC; CVD; Hall measurements; Si; Silicon on insulator; TEM; XRD

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); NUCLEATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

CRYSTAL QUALITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0040357280     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00474-7     Document Type: Article

References (4)

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3. F. Schulte, G. Strauch, H. Jürgensen, E. Niemann, D. Leidich, Tran. 2nd High Temperature Electronics Conference, Charlotte, June 1994, 1, X-3.
4. Scholz R., Gösele U., Wischmeyer F., Niemann E. Appl. Phys. A66:1998;59-67.