High quality single crystal 3C-SiC(111) films grown on Si(111)

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 145-148

  Locke, Christopher ^a   Anzalone, Ruggero ^b,c   Severino, Andrea ^b   Bongiorno, Corrado ^b   Litrico, Grazia ^c   La Via, Francesco ^b   Saddow, Stephen E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b CNR IMM   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

(111); 3C SiC; CVD; Heteroepitaxy; Microtwins; Stacking faults

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SILICON WAFERS; SINGLE CRYSTALS; STACKING FAULTS; SUBSTRATES;

(111); 3C-SIC; DETECTION LIMITS; HIGH QUALITY SINGLE CRYSTALS; LOW CONCENTRATIONS; MICROTWINS; STACKING FAULT DENSITY; TEM CHARACTERIZATION;

SILICON CARBIDE;

EID: 68949115257     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.145     Document Type: Conference Paper

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