High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Severino, A ^a   Bongiorno, C ^a   Piluso, N ^a   Italia, M ^a   Camarda, M ^a   Mauceri, M ^b   Condorelli, G ^b   Di Stefano, M A ^c   Cafra, B ^c   La Magna, A ^a   La Via, F ^a  

^a CNR   (Italy)

^b Epitaxial Technology Center   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

3C SiC heteroepitaxy; Defects; Large area substrates; Stress evolution

Indexed keywords

3C-SIC FILMS; 3C-SIC HETEROEPITAXY; CHEMICAL VAPOUR DEPOSITION; CRYSTALLINE DEFECTS; FILM QUALITY; FLAT SURFACES; GROWTH PROCESS; HETEROEPITAXY; HIGH QUALITY; LARGE-AREA SUBSTRATES; MECHANICAL DEVICE; MIS-ORIENTATION; OFF-AXIS; OPTICAL PROFILOMETER; PHASE DISORDER; SI SUBSTRATES; STRESS EVOLUTION; WHOLE SYSTEMS;

DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; PHASE INTERFACES; SILICON; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS;

SUBSTRATES;

EID: 74049106288     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.080     Document Type: Article

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