TEM investigation of silicon carbide wafers with reduced micropipe density

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 364-367

  Saddow, S E ^a   Schattner, T E ^a   Shamsuzzoha, M ^b   Rendakova, S V ^c   Dmitriev, V A ^d,e  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ALABAMA   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d HOWARD UNIVERSITY   (United States)

^e TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MICROPIPE DEFECT; SILICON CARBIDE WAFERS;

SILICON CARBIDE;

EID: 0033872696     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0078-4     Document Type: Article

References (7)

1. S. Rendakova and V. Dmitriev, Abstracts of Fall '97 MRS Meeting (Warrendale, PA: MRS, 1997), pp. 149-150.
2. TDI, Inc. Gaithersburg, MD 20877; http//tdii.com.
3. S. Rendakova, N. Kuznetsov, N. Savkina, M. Rastegaeva, A. Andreev, M. Minbaeva, A. Morozov, and V. Dimitriev, to be published in the MRS proceedings.
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7. P.G. Neudeck and C. Fazi, IEEE Trans on Electron Devices 46, 485 (1999).