PECVD silicon carbide as a chemically resistant material for micromachined transducers

Sensors and Actuators, A: Physical

Volumn 70, Issue 1-2, 1998, Pages 48-55

  Flannery, Anthony F ^a   Mourlas, Nicholas J ^a   Storment, Christopher W ^a   Tsai, Stan ^b   Tan, Samantha H ^b   Heck, John ^c   Monk, Dave ^d   Kim, Thomas ^d   Gogoi, Bishnu ^d   Kovacs, Gregory T A ^a  

^a STANFORD UNIVERSITY   (United States)

^b ChemTrace Corporation   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d MOTOROLA INC   (United States)

Author keywords

Dielectric; Passivation; PECVD silicon carbide; Stress

Indexed keywords

EID: 0002856733     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00111-3     Document Type: Article

References (12)

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