Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates

ECS Transactions

Volumn 3, Issue 5, 2006, Pages 287-298

  GD'Arrigo, ^a   Severino, A ^a,c   Leone, S ^b   Mauceri, M ^b   Abbondanza, G ^b   Buongiorno, C ^a   Terrasi, A ^c   La Via, F ^a  

^a CNR IMM   (Italy)

^b Epitaxial Technology Center   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; POROSITY; POROUS SILICON; SILICON WAFERS; THERMAL EXPANSION; THERMAL STRESS;

HETEROEPITAXIAL GROWTH; SILICON POROUS SILICON SILICON (SPS) SUBSTRATES; SUBSTRATE TREATMENTS;

SILICON CARBIDE;

EID: 33846952893     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357217     Document Type: Conference Paper

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