Strain tailoring in 3C-SiC heteroepitaxial layers grown on Si(100)

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 483-488

  Ferro, Gabriel ^a   Chassagne, Thierry ^b,c   Leycuras, André ^c   Cauwet, François ^a   Monteil, Yves ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b SAVOIE TECHNOLAC   (France)

^c CRHEA CNRS   (France)

Author keywords

3C SiC; Carbonization; Silicon; Silicon on insulators; Strain reduction

Indexed keywords

AMORPHOUS SILICON; CARBONIZATION; EPITAXIAL GROWTH; LATTICE CONSTANTS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRAIN MEASUREMENT; THERMAL EXPANSION;

HETEROEPITAXIAL LAYERS; LAYER DEPOSITION; STRAIN REDUCTION; STRAIN TAILORING;

SILICON CARBIDE;

EID: 33845652094     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506461     Document Type: Article

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