Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-SiC epitaxial films

Journal of the Electrochemical Society

Volumn 146, Issue 10, 1999, Pages 3833-3836

  Hobart, K D ^a,b   Kub, F J ^a   Fatemi, M ^a   Taylor, C ^a   Eshun, E ^a   Spencer, M G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILICON CARBIDE; SUBSTRATES; ULTRATHIN FILMS; X RAY CRYSTALLOGRAPHY;

EPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0033335673     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392560     Document Type: Article

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