3C-SiC films on Si for MEMS applications: Mechanical properties

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 633-636

  Locke, C ^a   Kravchenko, G ^a   Waters, P ^a   Reddy, J D ^a   Du, K ^b   Volinsky, A A ^a   Frewin, C L ^a   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b NONE

Author keywords

3C SiC; CVD; Hardness; Heteroepitaxy; MEMS; Young's modulus

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELASTIC MODULI; EPITAXIAL GROWTH; HARDNESS; MEMS; NANOCANTILEVERS; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

3C-SIC; MEMS APPLICATIONS; MEMS CANTILEVERS; PLASTIC PROPERTY; POLYCRYSTALLINE; POLYCRYSTALLINE 3C-SIC; POLYCRYSTALLINE SIC; SI SUBSTRATES;

SILICON CARBIDE;

EID: 78649378208     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.633     Document Type: Conference Paper

References (12)

1. M. Mehregany et al.: Thin Solid Films Vol. 355-356 (1999), p. 518 doi:10.1016/S0257-8972(99)00374-6. (Pubitemid 30523254)
2. M. Mehregany et al.: Proc. of the IEEE Vol. 86 (1998), p. 1594 doi:10.1109/5.704265.
3. P. M. Sarro: Sensors and Actuators A: Physical Vol. 82 (2000), p. 210 doi:10.1016/S0924-4247(99)00335-0.
4. M. Reyes et al.: Mat Sci Forum Vol. 527-529 (2006), p. 191 doi:10.4028/www.scientific.net/MSF.527-529.307.
5. S. Nishino et al.: Appl. Phys. Lett. Vol. 42 (1983), p. 460 doi:10.1063/1.93970.
6. A. Severino et al.: J. Appl. Phys. Vol. 102 (2007), p. 023518 doi:10.1063/1.2756620. (Pubitemid 47191963)
7. R. L. Myers et al.: J. Crystal Growth Vol. 284-285 (2005), p. 483.
8. M. Mehregany et al.: IEEE Trans. Electron Dev. Vol. 44 (1997), p. 74 doi:10.1109/16.554795.
9. R. Anzalone et al.: IEEE Trans. Electron Dev. Vol. 44 (1997), p. 74, ibid.
10. M. Reyes et al.: Mat. Res. Soc. Symp. Proc. Vol. 911 (2006), p. 79.
11. A. A. Volinsky et al.: Mat. Res. Soc. Symp. Proc. Vol. 1069 (2008).
12. J. D. Reddy et al.: Mat. Res. Soc. Symp. Proc. Vol. 1069 (2008).