Increased growth rate in a SiC CVD reactor using HCl as a growth additive

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 73-76

  Myers, R ^a   Kordina, O ^b   Shishkin, Z ^a   Rao, S ^a   Everly, R ^a   Saddow, S E ^a  

^a University of South Florida   (United States)

^b Caracal   (United States)

Author keywords

CVD; HCl; Hot wall; SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROGEN INORGANIC COMPOUNDS; PROPANE; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON CARBIDE;

ADDITIVE GAS; GROWTH ADDITIVES; HYDROGEN CHLORIDE (HCL); SIC CVD REACTORS;

GROWTH RATE;

EID: 33747111200     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (2)

1. T. Kimoto, S. Nakazawa, K. Fujihira, T. Hirao, S. Nakamura, Y. Chen, K. Hashimoto, and H. Matsunami, Mat. Sci. Forum, Vols. 389 - 393, pp. 165 - 170, (2002).
2. R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schörner, and D. Stephani, Materials Science Forum, Vols. 264-268, (1998), pp. 89-96.